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Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4605 Data Manual

Summary

Streamline your circuit design with the RN4605 combined transistor module. This specialized super mini package integrates complementary PNP and NPN transistors and features built-in bias resistors, significantly simplifying interfacing and inverter circuitry. The package minimizes component count and manufacturing steps, making it ideal for designers developing compact switching, driver, and interface circuits in portable or space-constrained electronics. The manual provides complete electrical specifications, maximum ratings, and optimized application guidance.

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查询RN4605供应商

RN4605

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4605

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

Unit in mm

Includeing two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

R1: 2.2kΩ R2: 47kΩ (Q1, Q2 Common)

Q1 Maximum Ratings (Ta = 25C)

JEDEC ―

Characteristic Symbol Rating Unit

EIAJ ―

Collector-base voltage VCBO −50 V

TOSHIBA 2-3N1A

Collector-emitter voltage VCEO −50 V Weight: 0.015g Emitter-base voltage VEBO −5 Collector current IC −100 m A

Q2 Maximum Ratings (Ta = 25C)

Characteristic Symbol Rating Unit

Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 Collector current IC 100 m A

Page Summary Contents For Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4605 Data Manual

Page 1 查询RN4605供应商 RN4605 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4605 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applica...
Page 2 RN4605 Q1, Q2 Common Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector power dissipation PC * 300 m W Junction temperature Tj 150 C Storage temperature range Tstg −55~150 C * T...
Page 3 RN4605 Q1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Test Condition Min Typ. Max Unit Circuit ICBO ― VCB = −50V, IE = 0 ― ― −100 Collector cut-off current n A ICEO ― VCE = −50V,...
Page 4 RN4605
Page 5 RN4605 000707EAARESTRICTIONS ON PRODUCT USE TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fai...

Manual Details

Brand Toshiba
Pages 5
File Size 150.14 KB
Published June 04, 2026
23 views

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Frequently Asked Questions

What is the collector power dissipation rating?

The total collector power dissipation ($P_C$) for both devices is 300 mW.

Are bias resistors built into this device?

Yes, it includes built-in bias resistors with values R1: 2.2kΩ and R2: 47kΩ to simplify circuit design.

Can the RN4605 be used in mission-critical systems?

No; it is not warranted for use in equipment requiring extraordinarily high reliability, such as medical or airplane instruments (Unintended Usage).

What is the maximum junction temperature?

The maximum junction temperature ($T_j$) rating is 150 °C.