Fairchild SS8550 PNP Epitaxial Silicon Transistor Data Handbook

SS8550 — 2W utput A plifier of Portable R adios in C lass B Push-pull O peration

March 2008

SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation Features Complimentary to SS8050 Collector Current: IC=1.5A Collector Power Dissipation: PC=1W (TC=25×C)

TO-921

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings Ta=25×C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -6 IC Collector Current -1.5 PC Collector Power Dissipation TJ Junction Temperature °C TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25×C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100μA, IE=0 -40 BVCEO Collector-Emitter Breakdown Voltage IC= -2m A, IB=0 -25 BVEBO Emitter-Base Breakdown Voltage IE= -100μA, IC=0 -6 ICBO Collector Cut-off Current VCB= -35V, IE=0 -100 n A IEBO Emitter Cut-off Current VEB= -6V, IC=0 -100 n A h FE1 DC Current Gain VCE= -1V, IC= -5m A h FE2 VCE= -1V, IC= -100m A h FE3 VCE= -1V, IC= -800m A VCE (sat) Collector-Emitter Saturation Voltage IC= -800m A, IB= -80m A -0.28 -0.5 VBE (sat) Base-Emitter Saturation Voltage IC= -800m A, IB= -80m A -0.98 -1.2 VBE (on) Base-Emitter on Voltage VCE= -1V, IC= -10m A -0.66 -1.0 Cob Output Capacitance VCB= -10V, IE=0 p F

f=1MHz

f T Current Gain Bandwidth Product VCE= -10V, IC= -50m A MHz

h FEClassification Classification

h FE2 85 ~ 160 120 ~ 200 160 ~ 300

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com SS8550 Rev. 1.0.0