Fairchild KSC1845 NPN Epitaxial Silicon Transistor Data Handbook

KSC1845

Audio Frequency Low Noise Amplifier Complement to KSA992

TO-921

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current m A IB Base Current m A

PC Collector Power Dissipation m W

TJ Junction Temperature °C TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=120V, IE=0 n A IEBO Emitter Cut-off Current VEB=5V, IC=0 n A

h FE1 DC Current Gain VCE=6V, IC=0.1m A

h FE2 VCE=6V, IC=1m A

VBE (on) Base-Emitter On Voltage VCE=6V, IC=1m A 0.55 0.59 0.65 VBE (sat) Collector-Emitter Saturation Voltage IC=10m A, IB=1m A 0.07 0.3 f T Current Gain Bandwidth Product VCE=6V, IC=1m A MHz Cob Output Capacitance VCB=30V, IE=0, f=1MHz 1.6 2.5 p F

NL Noise Level m V

h FE Classification Classification P

h FE2 200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200

©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002