Fairchild KSC2331 NPN Epitaxial Silicon Transistor Data Manual
Summary
This datasheet provides comprehensive specifications for the KSC2331 NPN Epitaxial Silicon Transistor. This reliable component is engineered for low-frequency amplifier circuits and medium-speed switching applications, featuring high operational ratings up to 80V and 700mA. The included manual covers detailed electrical characteristics, absolute maximum ratings, and typical performance graphs necessary for robust circuit design. It is ideal for electrical engineers and designers building power management systems or needing a high-performance semiconductor solution.
Page 1 Text Content
SC 2331 — PN Epitaxial Silicon Transistor
December 2011
KSC2331 NPN Epitaxial Silicon Transistor
Features Low Frequency Amplifier & Medium Speed Switching Complement to KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700m A
TO-92L1
Collector Dissipation : PC=1W
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current m A PC Collector Power Dissipation TJ Junction Temperature °C TSTG Storage Temperature -55 to 150 °C
Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=10m A, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=10μA, IC=0 8 ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 μA IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 μA h FE DC Current Gain VCE=2V, IC=50m A VCE (sat) Collector-Emitter Saturation Voltage IC=500m A, IB=50m A 0.2 0.7 VBE (sat) Base-Emitter Saturation Voltage IC=500m A, IB=50m A 0.86 1.20
h FE Classification Classification R
h FE 40 ~ 80 70 ~ 140 120 ~ 240
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2331 Rev. B0
Page Summary Contents For Fairchild KSC2331 NPN Epitaxial Silicon Transistor Data Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 3 |
| File Size | 103.64 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What is the maximum collector dissipation?
The transistor has a Collector Dissipation (PC) of 1W.
What are the breakdown voltages for this component?
The Collector-Base Voltage (CBO) is 80V, and the Collector-Emitter Voltage (CEO) is 60V.
What is the typical DC current gain (hFE)?
The rated hFE ranges from 40 to 80.
Is this transistor suitable for life support equipment?
No, Fairchild products require express written approval for use in critical life support devices or systems.