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FAIRCHILD KSD261 NPN Epitaxial Silicon Transistor User Manual

Summary

Optimize your electronics design with the KSD261, a reliable NPN low-frequency power amplifier transistor. This technical datasheet serves as a comprehensive resource for electrical engineers and circuit designers requiring precise component specifications. It details absolute maximum ratings, detailed current gain curves (hFE), saturation voltages, and performance characteristics necessary for stable signal amplification in low-power applications. Use this manual to model and ensure the effective integration of the KSD261 into high-performance power circuits.

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KSD261

Low Frequency Power Amplifier Complement to KSA643 Collector Power Dissipation : PC=500m W Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

TO-921

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current m A PC Collector Power Dissipation m W TJ Junction Temperature °C TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0

BVCEO Collector-Emitter Breakdown Voltage IC=10m A, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 ICBO Collector Cut-off Current VCB=25V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=3V, IC=0 0.1 µA h FE DC Current Gain VCE=1V, IC=0.1A VCE (sat) Collector-Emitter Saturation Voltage IC=0.5A, IB=50m A 0.18 0.4

h FE Classification Classification Y

h FE 120 ~ 240 200 ~ 400

©2004 Fairchild Semiconductor Corporation Rev. B2, April 2004

Page Summary Contents For FAIRCHILD KSD261 NPN Epitaxial Silicon Transistor User Manual

Page 1 KSD261 Low Frequency Power Amplifier Complement to KSA643 Collector Power Dissipation : PC=500m W Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-921 1. Emitter 2. Base 3. Coll...
Page 2 SD Typical Characteristics E( sa t), E( sa t)[ SA TU AT IO LT AG [m A] , C LL EC TO EN ob [p F] , C PA IT AN VCE = 1V IB = 2.0m A IB = 1.8m A IB = 1.6m A IB = 1.4m A IB = 1.2m A IB = 1.0m A IB = 0.8m ...
Page 3 SD Package Dimensions TO-92 3. 1. 0. +0 .1 1.27TYP 1.27TYP 0.38 Dimensions in Millimeters Rev. B2, April 2004©2004 Fairchild Semiconductor Corporation
Page 4 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT...

Manual Details

Brand Fairchild
Pages 4
File Size 39.11 KB
Published July 07, 2026
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Frequently Asked Questions

What is the maximum allowed operating voltage for the collector-emitter junction?

The absolute maximum rating for Collector-Emitter Voltage (CEO) is 20V.

Can I use this transistor in life support medical devices?

No, Fairchild's products are not authorized for use as critical components in life support devices without express written approval.

What is the typical DC Current Gain (hFE)?

At a collector current of 10mA, the DC Current Gain hFE typically ranges from 120 to 240.

Does this datasheet represent final specifications for purchasing?

Only a datasheet labeled 'Full Production' contains final specifications; preliminary data requires supplementary publications.