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Fairchild KSC3265 NPN Epitaxial Silicon Transistor Data Handbook

Summary

The KSC3265 is a robust NPN Epitaxial Silicon Transistor component packaged in an SOT-23 housing, engineered for precise switching and signal amplification in electronic circuits. This comprehensive technical datasheet provides electrical engineers and circuit designers with essential specifications, including detailed absolute maximum ratings, performance characteristics, current gain metrics, and physical dimensions. It serves as a critical resource for integrating the transistor reliably into high-performance analog systems that require stable operation and low power dissipation.

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KSC3265

Low Frequency Amplifier Complement to KSA1298

SOT-23

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units

VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current m A IB Base Current m A PC Collector Power Dissipation m W TJ Junction Temperature °C TSTG Storage Temperature -55 ~ 150 °C

∗ Refer to KSD261 for graphs

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units

BVCEO Collector-Emitter Breakdown Voltage IC=10m A, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=1m A, IC=0 ICBO Collector Cut-off Current VCB=30V, IE=0 n A IEBO Emitter Cut-off Current VEB=5V, IC=0 n A h FE1 DC Current Gain VCE=1V, IC=100m A

h FE2 VCE=6V, IC=800m A

VCE (sat) Collector-Emitter Saturation Voltage IC=500m A, IB=20m A 0.4 VBE (on) Base-Emitter On Voltage VCE=1V, IC=10m A 0.5 0.8 f T Current Gain Bandwidth Product VCE=5V, IC=10m A MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz p F

h FE Classification

Classification O

h FE 100 ~ 200 160 ~ 320

Marking

h FE grade

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

Page Summary Contents For Fairchild KSC3265 NPN Epitaxial Silicon Transistor Data Handbook

Page 1 KSC3265 Low Frequency Amplifier Complement to KSA1298 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter V...
Page 2 SC Package Dimensions SOT-23 0.38 REF .2 IN 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT...

Manual Details

Brand Fairchild
Pages 3
File Size 44.82 KB
Published June 06, 2026
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Frequently Asked Questions

Can I use this transistor component in life support systems?

No, Fairchild's products are not authorized for use as critical components in life support devices without express written approval.

What is the maximum current this component can handle?

The absolute maximum collector current (IC) is 800 mA.

What breakdown voltage should I expect between collector and emitter?

The typical breakdown voltage (BVCEO) is specified as 25 V.

What package type is the KSC3265 supplied in?

It comes in an SOT-23 package with defined external dimensions.