Fairchild KSD1616 1616A NPN Epitaxial Silicon Transistor User Manual

SD 1616/1616A udio Frequency Pow er A plifier & edium Speed Sw itching

November 2007

KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSB1116/1116A

TO-921

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage : KSD1616

: KSD1616A

VCEO Collector-Emitter Voltage : KSD1616

: KSD1616A

VEBO Emitter-Base Voltage IC Collector Current (DC) ICP * Collector Current (Pulse) PC Collector Power Dissipation 0.75 TJ Junction Temperature °C TSTG Storage Temperature -55 ~ 150 °C

* PW≤10ms, Duty Cycle < 50%

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=60V, IE=0 n A IEBO Emitter Cut-off Current VEB=6V, IC=0 n A h FE1 DC Current Gain : KSD1616 VCE=2V, IC=100m A

: KSD1616A

h FE2 VCE=2V, IC=1A VBE (on) * Base-Emitter On Voltage VCE=2V, IC=50m A m V VCE (sat) * Collector-Emitter Saturation Voltage IC=1A, IB=50m A 0.15 0.3 VBE (sat) * Base-Emitter Saturation Voltage IC=1A, IB=50m A 0.9 1.2 Cob Output Capacitance VCE=10V, IE=0, f=1MHz p F f T Current Gain Bandwidth Product VCE=2V, IC=100m A MHz t ON Turn On Time VCC=10V, IC=100m A 0.07 μs

t STG Storage Time IB1= -IB2=10m A 0.95 μs VBE (off) = -2~-3V

t F Fall Time 0.07 μs * Pulse Test: PW<350μs, Duty Cycle≤2% Pulsed

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