Fairchild KSC1008 NPN Epitaxial Silicon Transistor Data Handbook
Summary
The KSC1008 is a reliable NPN Epitaxial Silicon Transistor designed for low-frequency amplification and medium-speed switching applications. This comprehensive datasheet provides electronic designers with full specifications, detailing absolute maximum ratings, precise electrical characteristics (such as current gain and saturation voltages), and diverse packaging options including TO-92, Tape & Reel, and Bulk components. It serves engineers needing a dependable general-purpose transistor component for robust circuit design.
Page 1 Text Content
SC 1008 N PN Epitacial Silicon Transistor
September 2006
KSC1008
NPN Epitacial Silicon Transistor Features Low frequency amplifier medium speed switching. High Collector-Base Voltage : VCBO=80V. Collector Current : IC=700m A Collector Power Dissipation : PC=800m W
TO-92
Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)
Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector) 1 2 3
KSC1008 : 1. Emitter 2. Base 3. Collector
Complement to KSA708
KSC1008C : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector current m A PC Collector Power Dissipation m W TJ Junction Temperature +150 °C Tstg Storage Temperature -55 ~ +150 °C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics * Ta = 25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=10m A, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 µA h FE DC Current Gain VCE=2V, IC=50m A VCE (sat) Collector-Emitter Saturation Voltage IC=500m A, IB=50m A 0.2 0.4 VBE (sat) Base-Emitter Saturation Voltage IC=500m A, IB=50m A 0.86 1.1
f T Current Gain Bandwidth Product VCE=10V, IC=50m A MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz p F * DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
h FE Classification Classification R
h FE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
©2 006 Fairchild Semiconductor Corporation www.fairchildsemi.com KS C1008 Rev. B
Page Summary Contents For Fairchild KSC1008 NPN Epitaxial Silicon Transistor Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 149.41 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What are the transistor's maximum voltage ratings?
The absolute maximum ratings include a Collector-Base Voltage (Vcb) of 80 V and a Collector-Emitter Voltage (Vce) of 60 V.
How do I differentiate between KSC1008C and standard models?
The suffix “-C” denotes the Center Collector arrangement, while non-“C” suffixes utilize a Side Collector design.
Can these transistors be used in life support systems?
No; their use as critical components in life support devices requires the express written approval of Fairchild Semiconductor Corporation.
What packaging format is available for automated high-volume orders?
The device is available in TO-92 Bulk, and also precision packaged in TAPE & AMMO or TAPE & REEL formats.