Fairchild KSC5019 NPN Epitaxial Silicon Transistor Data Sheet
Summary
This detailed datasheet provides comprehensive technical specifications for the KSC5019 NPN Bipolar Junction Transistor. Ideal for electronic designers, engineers, and circuit builders requiring a reliable and high-performance switching component. The manual covers absolute maximum ratings, key electrical characteristics—including low saturation voltage (V(sat)=0.5V)—and operational curves necessary for integrating the transistor into power or signal amplification circuits.
Page 1 Text Content
KSC5019
Low Saturation VCE(sat)=0.5V at IC=2A, IB=50m A
TO-921
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse) IB Base Current
PC Collector Power Dissipation m W TJ Junction Temperature °C TSTG Storage Temperature -55 ~ 150 °C
* PW≤10ms, Duty Cycle≤30%
Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 n A
IEBO Emitter Cut-off Current VEB=6V, IC=0 n A BVCEO Collector-Emitter Breakdown Voltage IC=10m A, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=1m A, IC=0 h FE1 DC Current Gain VCE=1V, IC=0.5A
h FE2 VCE=1V, IC=2A VCE (sat) Collector-Emitter Saturation Voltage IC=2A, IB=50m A 0.2 0.5
VBE (on) Base Emitter On Voltage VCE=1V, IC=2A 0.86 1.5 f T Current Gain Bandwidth Product VCE=1V, IC=0.5A MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz p F
h FE Classification Classification L
h FE 140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page Summary Contents For Fairchild KSC5019 NPN Epitaxial Silicon Transistor Data Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 4 |
| File Size | 38.39 KB |
| Published | July 10, 2026 |
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Frequently Asked Questions
What is the typical Collector-Emitter Saturation Voltage ($V_{CE(sat)}$)?
The typical saturation voltage at an operating current of 2A and 50mA is 0.5 V.
What are the maximum safe ratings for this transistor?
The absolute maximum rating for Collector Power Dissipation (CT) is 750 mW, and the Junction Temperature can reach 150 °C.
What is the difference between pulse and DC collector current limits?
The Collector Current (Pulse) ($I_{CP}$) limit is 5 A, compared to a sustained DC Collector Current (DC) limit of 2 A.