Fairchild FJY3014R NPN Epitaxial Silicon Transistor Data Handbook

FJY3014R PN Epitaxial Silicon Transistor

November 2006

FJY3014R

NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7KΩ, R2=47KΩ) Complement to FJY4014R

Eqivalent Circuit

SOT - 523F

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 10 IC Collector Current 100 m A TSTG Storage Temperature Range -55~150 °C TJ Junction Temperature °C PC Collector Power Dissipation, by RθJA m W * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Max Units RθJA Thermal Resistance, Junction to Ambient °C/W * Minimum land pad.

Electrical Characteristics* TC = 25°C unless otherwise noted Symbol Parameter Test Condition MIN Typ MAX Units V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 u A, IE = 0 V(BR)CEO Collector-Base Breakdown Voltage IC = 100 u A, IB = 0 ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 0.1 u A h FE DC Current Gain VCE = 5 V, IC = 5 m A VCE(sat) Collector-Emitter Saturation Voltage IC = 10 m A, IB = 0.5 m A 0.3 f T Current Gain - Bandwidth Product VCE = 10V, IC = 5 m A MHz Ccb Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 3.7 p F VI(off) Input Off Voltage VCE = 5 V, IC = 100u A 0.5 VI(on) Input On Voltage VCE = 0.2V, IC = 5m A 1.3 R1 Input Resistor 3.2 4.7 6.2 KΩ R1/R2 Resistor Ratio 0.09 0.1 0.11 * Pulse Test: PW≤300µs, Duty Cycle≤2%

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FJY3014R Rev. A