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Fairchild SS9012 PNP Epitaxial Silicon Transistor Data Sheet

Summary

This PNP epitaxial silicon transistor serves as a robust output amplifier, specifically designed for Class B push-pull operation in audio circuits like radios. Comprehensive specifications cover performance ratings, electrical characteristics, and saturation voltages essential for high-fidelity amplification tasks. This technical resource is mandatory reading for electrical engineers and electronics designers who require detailed operational data to precisely integrate and optimize the SS9012 into their audio equipment designs.

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SS9012

SS9012

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625m W) High Collector Current. (IC= -500m A) Complementary to SS9013 Excellent h FE linearity.

TO-921

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units

VCBO Collector-Base Voltage -40

VCEO Collector-Emitter Voltage -20

VEBO Emitter-Base Voltage -5 IC Collector Current -500 m A PC Collector Power Dissipation m W

TJ Junction Temperature °C

TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE =0 -40 BVCEO Collector-Emitter Breakdown Voltage IC = -1m A, IB =0 -20

BVEBO Emitter-Base Breakdown Voltage IE = -100µA, IC =0 -5

ICBO Collector Cut-off Current VCB = -25V, IE =0 -100 n A IEBO Emitter Cut-off Current VEB = -3V, IC =0 -100 n A h FE1 DC Current Gain VCE = -1V, IC = -50m A

h FE2 VCE = -1V, IC = -500m A

VCE (sat) Collector-Emitter Saturation Voltage IC = -500m A, IB = -50m A -0.18 -0.6 VBE (sat) Base-Emitter Saturation Voltage IC = -500m A, IB = -50m A -0.95 -1.2 VBE (on) Base-Emitter On Voltage VCE = -1V, IC = -10m A -0.6 -0.67 -0.7

h FE Classification Classification

h FE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202

©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002

Page Summary Contents For Fairchild SS9012 PNP Epitaxial Silicon Transistor Data Sheet

Page 1 SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625m W) High Collector Current. (IC= -500m A) Complementary to SS9013 Excellent h ...
Page 2 SS9012 Typical Characteristics E( sa t), (s at )[V AT AT IO LT AG [m A] , C LL EC TO RR EN IB=-300µA VCE = -1V IB=-250µA IB=-200µA IB=-150µA IB=-100µA IB=-50µA VCE[V], COLLECTOR-EMITTER VOLTAGE IC[m A...
Page 3 SS9012 Package Dimensions TO-92 3. 1. 0. +0 .1 1.27TYP 1.27TYP 0.38 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
Page 4 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT...

Manual Details

Brand Fairchild
Pages 4
File Size 35.97 KB
Published July 06, 2026
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Frequently Asked Questions

What is the maximum collector power dissipation?

The absolute maximum rating for collector power dissipation (Pc) is 625 mW.

Is this device safe for life support systems?

No, Fairchild's products are not authorized for use as critical components in life support devices without express written approval.

What type of packaging does the SS9012 use?

The SS9012 is provided in a TO-92 package.

How are the terminals labeled?

The terminals are labeled: 1. Emitter, 2. Base, and 3. Collector.