Fairchild KSP94 PNP Epitaxial Silicon Transistor User's Manual

KSP94

High Voltage Transistor High Collector-Emitter Voltage: VCEO= -400V Low Collector-Emitter Saturation Voltage Complement to KSP44

TO-921

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -400

VCEO Collector-Emitter Voltage -400 VEBO Emitter-Base Voltage -6 IC Collector Current -300 m A

PC Collector Power Dissipation m W

TJ Junction Temperature °C TSTG Storage Temperature -55~150 °C

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -400 BVCES Collector-Emitter Breakdown Voltage IC= -100µA, VBE=0 -400

BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -6 ICBO Collector Cut-off Current VCB= -300V, VE=0 -100 n A ICES Collector Cut-off Current VCE= -400V, VBE=0V -1 µA IEBO Emitter Cut-off Current VBE= -4V, IC=0 -100 n A h FE1 DC Current Gain VCE= -10V, IC= -1m A

h FE2 VCE= -10V, IC= -10m A

h FE3 VCE= -10V, IC= -50m A

h FE4 VCE= -10V, IC= -100m A

VCE (sat)1 Collector-Emitter Saturation Voltage IC= -10m A, IB= -1m A -500 m V

VCE (sat)2 IC= -50m A, IB= -5m A -750 m V

VBE (sat) Base-Emitter Saturation Voltage IC= -10m A, IB= -1m A -750 m V Cob Output Capacitance VCB= -20V, IE=0, f=1MHz p F

©2002 Fairchild Semiconductor Corporation Rev. A2, July 2002