FAIRCHILD KSP55 56 PNP Epitaxial Silicon Transistor User's Manual
Summary
These PNP Epitaxial Silicon Amplifier Transistors (KSP55/KSP56) are essential components designed for robust switching and amplification applications requiring up to 80V collector-emitter voltage and 625mW power dissipation. The technical manual provides comprehensive specifications, including absolute maximum ratings, detailed electrical characteristics like current gain ($\text{h}_{\text{FE}}$), saturation voltages, and precise TO-92 packaging dimensions. This datasheet is ideal for electronics engineers and designers seeking a reliable high-performance solid-state component for their circuit builds.
Page 1 Text Content
SP55/56
KSP55/56
Amplifier Transistor Collector-Emitter Voltage: VCEO=KSP55: 60V
KSP56: 80V
Collector Power Dissipation: PC (max) =625m W Complement to KSP05/06
TO-921
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
: KSP55 -60 : KSP56 -80
VCEO Collector-Emitter Voltage
: KSP55 -60 : KSP56 -80
VCEO Emitter-Base Voltage -4
IC Collector Current -500 m A
PC Collector Power Dissipation m W TJ Junction Temperature °C TSTG Storage Temperature -55 ~ 150 °C
Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units
BVCEO * Collector-Emitter Breakdown Voltage
: KSP55 IC= -1m A, IB=0 -60 : KSP56 -80
BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -4
ICBO Collector Cut-off Current
: KSP55 VCB= -60V, IE=0 -0.1 µA : KSP56 VCB= -80V, IE=0 -0.1 µA
ICEO Collector Cut-off Current VCE= -60V, IB=0 -0.1 µA h FE DC Current Gain VCE= -1V, IC= -10m A
VCE= -1V, IC= -100m A
VCE (sat) Collector-Emitter Saturation Voltage IC= -100m A, IB= -10m A -0.25 VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -100m A -1.2 f T Current Gain Bandwidth Product VCE= -2V, IC= -10m A MHz
f=100MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page Summary Contents For FAIRCHILD KSP55 56 PNP Epitaxial Silicon Transistor User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 4 |
| File Size | 34.61 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the maximum power dissipation for this transistor model?
The Collector Power Dissipation P(max) is rated at 625 mW C.
How do KSP55 and KSP56 differ in voltage ratings?
KSP55 has a Collector-Emitter Voltage (CEO) of -60V, while KSP56 is rated for up to -80V.
Can these transistors be used as critical components in life support systems?
No; the product requires express written approval from Fairchild Semiconductor Corporation for use in life support devices.
What are the typical dimensions of the TO-92 package?
The typical dimensions are 1.27 x 3.60 mm, with a maximum dimension noted as 4.58 mm.