Fairchild MPS751 Silicon PNP Transistor Data Handbook

PS751

MPS751

Silicon PNP Transistor (Note 1) Low Saturation Voltage

TO-921

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -60 IC Collector Current (DC)

PC Collector Dissipation (Ta=25°C) (Note 2, 3) m W TJ Junction Temperature °C TSTG Storage Temperature - 55 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Voltage IC = 100µA -80 BVCEO Collector-Emitter Voltage IC = 10m A -60 BVEBO Emitter-Base Voltage IE = 10µA -5 ICBO Collector Cut-off Current VCB = 30V n A IEBO Emitter Cut-off Current VEB = 3V n A h FE DC Current Gain VCE = 2V, IC = 50m A

VCE = 2V, IC = 500m A VCE = 2V, IC = 1A VCE = 2V, IC = 2A

VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 200m A 0.5

IC = 1A, IB = 100m A 0.3

VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100m A 1.2 VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 2m A f T Current gain Bandwidth Product VCE = 5V, IC = 50m A MHz

f = 100MHz

Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150degrees C.

©2002 Fairchild Semiconductor Corporation Rev. B, November 2002