Fairchild MMBT3906T PNP Epitaxial Silicon Transistor Data Manual
Summary
This compact, general-purpose PNP Epitaxial Silicon Transistor provides high performance for switching and amplification in portable electronics. Sold in a miniature SOT-523F surface mount package, it ensures compatibility with modern, space-constrained designs. The detailed technical manual is essential for engineers, covering absolute maximum ratings, comprehensive electrical characteristics (including current gain and saturation voltage), thermal analysis, and full performance curves to ensure reliable integration into embedded systems.
Page 1 Text Content
T3906T — PN P Epitaxial Silicon Transistor
February 2008
MMBT3906T PNP Epitaxial Silicon Transistor Features General purpose amplifier transistor. Ultra-Small Surface Mount Package for all types. Suitable for general switching & amplification
Marking : A06
Well suited for portable application SOT-523F
As complementary type, NPN MMBT3904T is recommended
Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -40 VEBO Emitter-Base Voltage -5 IC Collector Current m A TJ Junction Temperature 150 °C TSTG Storage Temperature Range -55 ~ 150 °C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Max Unit PC Collector Power Dissipation, by RθJA m W RθJA Thermal Resistance, Junction to Ambient °C/W * Minimum land pad.
Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = -10μA, IE = 0 -40 BVCEO Collector-Emitter Breakdown Voltage IC = -1m A, IB = 0 BVEBO Emitter-Base Breakdown Voltage IE = -10μA, IC = 0 -5 ICEX Collector Cut-off Current VCE = -30V, VEB(OFF) =-0.3V -50 n A h FE DC Current Gain VCE = 1V, IC =- 0.1m A
VCE = 1V, IC = -1m A VCE = 1V, IC = -10m A VCE = 1V, IC = -50m A VCE = 1V, IC = -100m A
VCE (sat) Collector-Emitter Saturation Voltage IC = -10m A, IB = -1m A -0.25
IC = -50m A, IB = -5m A -0.4
VBE (sat) Base-Emitter Saturation Voltage IC = -10m A, IB = -1m A -0.65 -0.85
IC = -50m A, IB = -5m A -0.95
f T Current Gain Bandwidth Product VCE = -20V, IC = -10m A, f = 100MHz MHz Cob Output Capacitance VCB = -5V, IE = 0, f = 1MHz 7.0 p F Cib Input Capacitance VEB = -0.5V, IC = 0, f = 1MHz p F td Delay Time VCC = -3V, IC = -10m A ns
tr Rise Time IB1 =- IB2 = -1m A ns
ts Storage Time ns tf Fall Time ns * DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
© 2 007 Fairchild Semiconductor Corporation www.fairchildsemi.com MM BT3906T Rev. 1.0.0
Page Summary Contents For Fairchild MMBT3906T PNP Epitaxial Silicon Transistor Data Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 4 |
| File Size | 131.63 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
What complementary NPN transistor should be used with the MMBT3906T?
The manual recommends MMBT3904T as its complementary type, NPN.
What are the limitations on Collector Power Dissipation?
The maximum power dissipation is 250 mW, based on the measurement at ambient temperature (TJA).
Can this transistor be used in high-frequency applications?
Yes; the current gain bandwidth product is up to 250 MHz.
What mounting and handling precautions are noted for this device?
It features an Ultra-Small Surface Mount Package (SOT-523F), and its Moisture Sensitivity Level is MSL 1.