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Dell Toshiba Vostro Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407, RN1408, RN1409 Data Sheet

Summary

Explore this documentation for TOSHIBA NPN Epitaxial Transistors (RN1407, RN1408, RN1409), engineered for reliable switching and interface circuit applications. Featuring built-in bias resistors, these transistors simplify complex designs, reducing component count and manufacturing steps in inverter and driver circuits. This guide provides comprehensive electrical characteristics, maximum ratings, and application details, making it essential for electronics engineers developing general-purpose equipment like industrial robotics or office systems that require high performance and stable circuit integration.

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Page 1 Text Content

查询RN1407供应商

RN1407,RN1408,RN1409

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1407,RN1408,RN1409 Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2407~RN2409

Equivalent Circuit and Bias Resister Values

Type No. R1 (kΩ) R2 (kΩ)

RN1407 10 47 RN1408 22 47 RN1409 47 22

JEDEC TO-236MOD EIAJ SC-59 TOSHIBA 2-3F1A Weight: 0.012g

Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Collector-base voltage RN1407~RN1409 VCBO 50 V Collector-emitter voltage RN1407~RN1409 VCEO 50 V

RN1407 6

RN1408 7 Emitter-base voltage VEBO

RN1409

Collector current RN1407~RN1409 IC 100 m A Collector power dissipation RN1407~RN1409 PC 200 m W Junction temperature RN1407~RN1409 Tj 150 °C Storage temperature range RN1407~RN1409 Tstg −55~150 °C

Page Summary Contents For Dell Toshiba Vostro Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407, RN1408, RN1409 Data Sheet

Page 1 查询RN1407供应商 RN1407,RN1408,RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407,RN1408,RN1409 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Application...
Page 2 RN1407,RN1408,RN1409 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Test Condition Min Typ. Max Unit Circuit ICBO VCB = 50V, IE = 0 ― ― 100Collector cut-off current RN1407~1409 ICEO...
Page 3 RN1407,RN1408,RN1409
Page 4 RN1407,RN1408,RN1409
Page 5 RN1407,RN1408,RN1409 Type No. Marking RN1407 RN1408 RN1409
Page 6 RN1407,RN1408,RN1409 000707EAARESTRICTIONS ON PRODUCT USE TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malf...
Page 7 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

Manual Details

Brand Toshiba
Pages 7
File Size 169.98 KB
Published June 05, 2026
25 views

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Frequently Asked Questions

What equipment is prohibited for use with these transistors?

The product is not warranted for 'Unintended Usage,' such as medical instruments, airplane instruments, or atomic energy control systems.

How does using this transistor simplify circuit design?

It features built-in bias resistors, which helps reduce the quantity of parts and simplifies the manufacturing process.

What is the maximum operating junction temperature?

The maximum rated Junction temperature (Tj) for all models is 150 °C.