Toshiba TOSHIBA Silicon Epitaxial Planar Type 1SV331 Data Handbook

查询1SV331供应商

1SV331

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

Useful for VCO/TCXO

• Small Package • High Capacitance Ratio : C1V/C4V = 3.75 (typ.) • Low Series Resistance : rs = 0.45 Ω (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C

000707EAA1

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