Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Data Handbook
Summary
The SSM3J02T is a high-performance Silicon P Channel MOSFET power management switch designed for demanding, high-speed switching applications. This comprehensive datasheet provides engineers with detailed electrical characteristics, including on-resistance (Rds(ON)), switching times, and temperature coefficients. It covers mounting guidelines, maximum ratings, operational curves, and advanced handling precautions necessary for implementing robust circuit designs by electronics developers and power system designers.
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SSM3J02T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02T
Power Management Switch
Unit: mm
High Speed Switching Applications
Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) Low-voltage operation possible
Maximum Ratings (Ta 25°C)
Characteristic Symbol Rating Unit
Drain-Source voltage VDS 30 V Gate-Source voltage VGSS 10 V
DC ID 1.5
Drain current IDP
Pulse 3.0
(Note2) PD
JEDEC ―
Drain power dissipation (Ta 25C) 1250 m W
(Note1)
JEITA ―
Channel temperature Tch 150 C Storage temperature range Tstg 55 to 150 C TOSHIBA 2-3S1A
Note1: Mounted on FR4 board Weight: 10 mg (typ.)
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm2, t 10 s) Note2: The pulse width limited by max channel temperature.
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Page Summary Contents For Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Data Handbook
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 5 |
| File Size | 135.52 KB |
| Published | June 01, 2026 |
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Frequently Asked Questions
What precautions must be taken when handling this device?
Protect it from electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects in direct contact must be anti-static.
Can this component be used for life-critical systems like medical devices?
No. It is not warranted for usage in equipment where a malfunction could cause loss of human life or bodily injury (Unintended Usage).
What are the recommended operating parameters related to heat and power?
The drain power dissipation (P_D) must be considered, particularly that pulse width can be limited by the maximum channel temperature.