Toshiba Field Effect Transistor Silicon N Channel MOS Type SSM3K02F Data Manual
Summary
A compact N-channel MOSFET transistor engineered for high-speed switching applications. Featuring low on-resistance and a small footprint, this component delivers reliable performance in dynamic circuits. The manual provides exhaustive technical specifications, including maximum ratings, operational curves, electrical characteristics, detailed handling precautions (ESD), and guidelines essential for designing robust electronic systems in general consumer or industrial equipment. Ideal for engineers building high-efficiency power switching solutions.
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SSM3K02F
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K02F
High Speed Switching Applications
Unit: mm
Small package Low on resistance : Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 m A)
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS 30 V Gate-source voltage VGSS 10 V
DC ID 1.0
Drain current
Pulse IDP 2.0
Drain power dissipation PD 200 m W
Channel temperature Tch 150 °C JEDEC TO-236MOD
Storage temperature range Tstg 55~150 °C JEITA SC-59
TOSHIBA 2-3F1F
Weight: 0.012 g (typ.)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Page Summary Contents For Toshiba Field Effect Transistor Silicon N Channel MOS Type SSM3K02F Data Manual
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 5 |
| File Size | 144.48 KB |
| Published | June 02, 2026 |
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