Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T Data Manual
Summary
The SSM3K01T is a high-speed N-Channel MOSFET transistor designed for critical power switching applications requiring low on-resistance and stable performance. This professional datasheet provides detailed electrical characteristics, including drain-source/gate-source profiles, thermal management guidelines, and operational specifications necessary for robust circuit design. It is essential reading for hardware engineers and electronics designers who require reliable component data when building high-efficiency, high-speed power switching systems.
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SSM3K01T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
Unit: mm
Small Package Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 m A)
Maximum Ratings (Ta 25°C)
Characteristic Symbol Rating Unit
Drain-Source voltage VDS 30 V Gate-Source voltage VGSS 10 V
DC ID 3.2
Drain current IDP
Pulse 6.4
(Note2) PD
Drain power dissipation (Ta 25C) 1250 m W
(Note1)
Channel temperature Tch 150 C
JEDEC ―
Storage temperature range Tstg 55~150 C
JEITA ―
Note1: Mounted on FR4 board
TOSHIBA 2-3S1A
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm2, t 10 s)
Weight: 10 mg (typ.)
Note2: The pulse width limited by max channel temperature.
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
Page Summary Contents For Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T Data Manual
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 5 |
| File Size | 151.01 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
How must I handle the SSM3K01T device?
Handle it in an environment protected against electrostatic electricity, and use anti-static materials for containers.
What power dissipation must be considered when installing this component?
You must fully take heat dissipation into account, as the drain power dissipation varies based on board material and thickness.