Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU Owner's Manual
Summary
Engineered for high-density mounting and demanding power environments, this N Channel MOS Field Effect Transistor is ideal for high-speed switching applications across various commercial electronics. The detailed manual provides comprehensive specifications on electrical characteristics—including voltage limits, On resistance, and switching times—necessary for reliable system design. It is intended for engineers developing general electronic equipment, such as industrial controls, measurement instrumentation, and consumer devices, ensuring safe performance planning within specified operating ranges.
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SSM3K17FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K17FU
High Speed Switching Applications
Unit: mm
Analog Switch Applications
Suitable for high-density mounting due to compact package High drain-source voltage High speed switching
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage VDS 50 V Gate-Source voltage VGSS ±7 V
DC ID 100
Drain current m A
Pulse IDP 200
Drain power dissipation (Ta = 25°C) PD (Note) 150 m W Channel temperature Tch 150 C
JEDEC ―
Storage temperature range Tstg −55~150 C
JEITA SC-70
Note: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3) TOSHIBA 2-2E1E
Weight: 6 mg (typ.)
0.6 mm
1.0 mm
Marking Equivalent Circuit
This transistor is a electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU Owner's Manual
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 5 |
| File Size | 222.74 KB |
| Published | June 01, 2026 |
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Frequently Asked Questions
What is the maximum drain-source voltage this transistor handles?
The rated drain-source voltage ($V_D$) is up to 50 V.
Is SSM3K17FU suitable for high-speed switching?
Yes, it is explicitly specified for High Speed Switching Applications, with defined turn-on and turn-off times.
How should I safely handle this device?
This component is an electrostatic sensitive device and must be handled with appropriate caution.