Toshiba Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8204 Data Manual
Summary
Discover the TPC8204 N-Channel Field Effect Transistor, an ultra-low resistance component engineered for efficient power management in demanding electronics. Featuring a small footprint and low drain-source ON resistance (16 mΩ), this transistor is ideal for portable equipment, including notebook PCs and lithium ion battery systems. This technical guide provides comprehensive electrical characteristics, detailed thermal ratings, and critical usage specifications designed to help engineers reliably implement the component into high-performance electronic designs.
Page 1 Text Content
查询TPC8204供应商
TPC8204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8204
Lithium Ion Battery Applications
Unit: mm
Portable Equipment Applications Notebook PCs
Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) High forward transfer admittance : |Yfs| = 18 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 20 V) Enhancement−mode : Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20kΩ) VDGR 20 V
Gate-source voltage VGSS ±12 V
D C (Note 1) ID 6 JEDEC ―
Drain curren
Pulse IDP 24 JEITA ― Single-device
TOSHIBA 2-6J1E
operation PD (1) 1.5 Drain power (Note 3a)
dissipation Weight: 0.080 g (typ.) (t = 10s) (Note 2a) Single-device value
at dual operation PD(2) 1.1 (Note 3b)
Circuit Configuration
Single-device operation PD (1) 0.75 Drain power (Note 3a)
dissipation (t = 10s) (Note 2b) Single-device value
at dual operation PD (2) 0.45 (Note 3b)
Single pulse avalanche energy (Note 4) EAS 46.8 m J Avalanche current (Note 1) IAR 6 A Repetitive avalanche energy Single-device value at operation EAR 0.1 m J (Note 2a, Note 3b, Note 5) Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8204 Data Manual
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 335.45 KB |
| Published | June 05, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
How should I handle this electrostatic sensitive device?
This transistor is an electrostatic sensitive device and must be handled with caution.
What is the maximum safe operating temperature for the channel?
The channel temperature must be kept below 150°C, as noted in the specifications.
Is this component suitable for critical medical or aerospace applications?
No. Unintended Usage (e.g., medical instruments or aircraft) requires higher reliability and is not warranted by TOSHIBA.
What are the power dissipation ratings if running two devices simultaneously?
The applicable thermal resistance values (Rth(ch-a)) must be checked under 'dual operation' conditions for correct calculation.