Toshiba Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI U−MOSII) TPC8402 Data Manual

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TPC8402

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)

TPC8402

Lithium Ion Secondary Battery Applications Notebook PCs

Unit: mm

Portable Equipment Applications

Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 37 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 6 S (typ.) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1m A) N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID = 1m A)

Maximum Ratings (Ta = 25°C)

Rating

Characteristics Symbol P Channel N Channel Unit

JEDEC ―

Drain-source voltage VDSS −30 30 V

JEITA ―

Drain-gate voltage (RGS = 20 kΩ) VDGR −30 30 V

TOSHIBA 2-6J1E

Gate-source voltage VGSS ±20 ±20 V

Weight: 0.080 g (typ.)

DC (Note 1) ID −4.5 5

Drain current

Pulse (Note 1) IDP −18 20 Single-device operation

Circuit Configuration

(Note 3a) PD (1) 1.5 1.5 Drain power

dissipation (t = 10s) (Note 2a) Single-device value at

dual operation (Note 3b) PD (2) 1.0 1.0 Single-device operation dissipation (Note 3a) PD (1) 0.75 0.75 Drain power

Single-device value at

(Note 2b)

dual operation (Note 3b) PD (2) 0.45 0.45

Single pulse avalanche energy EAS 26.3

(Note 4a) (Note 4b) m J

Avalanche current IAR −4.5 5 A Repetitive avalanche energy Single-device value at operation EAR 0.10 m J (Note 2a, Note 3b, Note 5) Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.