Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Data Handbook
Summary
The SSM3J14T is a compact P-Channel MOSFET Power Management Switch designed for high-density, efficient electronic applications. This technical manual provides comprehensive specifications, including detailed electrical characteristics (e.g., $R_{DS(ON)}$, gate thresholds), maximum ratings, and essential handling precautions against electrostatic discharge (ESD). It guides engineers in designing circuits ranging from computer equipment to industrial appliances by detailing performance parameters and operational guidelines, ensuring reliable integration into general electronics systems.
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SSM3J14T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J14T
Power Management Switch
Unit: mm
DC-DC Converters
Suitable for high-density mounting due to compact package Low on Resistance : Ron = 145 mΩ (max) (@VGS = −4.5 V) : Ron = 85 mΩ (max) (@VGS = −10 V) High-speed switching
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage VDS 30 V Gate-Source voltage VGSS 20 V
DC ID 2.7
Drain current IDP
Pulse 5.4
(Note 2) PD t 10 s 1.25
Drain power dissipation
JEDEC ―
(Note 1) 0.7
Channel temperature Tch 150 C JEITA ― Storage temperature range Tstg 55 to 150 C
TOSHIBA 2-3S1A
Note 1: Mounted on FR4 board Weight: 10 mg (typ.)
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width limited by maximum channel temperature.
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account
Page Summary Contents For Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Data Handbook
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 6 |
| File Size | 174.47 KB |
| Published | June 05, 2026 |
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Frequently Asked Questions
What is the drain-source on resistance of this transistor?
The maximum typical low on resistance (R) is 145 mΩ (@V = −4.5 V).
When designing a circuit, what must be considered regarding heat management?
Drain power dissipation varies based on board material, area, and thickness; full heat dissipation must be taken into account.
What anti-static measures must I take when handling the components?
Users should wear anti-static clothing, and containers contacting the device must also be made of anti-static materials.
Is this transistor suitable for life-critical applications like medical devices?
No, it is not warranted for equipment requiring extremely high quality or reliability where failure could cause injury; such use is 'Unintended Usage'.