Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU Data Sheet
Summary
This low on-resistance N-Channel MOSFET is designed for high-speed switching and analog applications in compact packages. The accompanying documentation provides comprehensive technical specifications, including detailed electrical characteristics, maximum ratings, and performance curves across varying operating temperatures. This manual is essential for hardware designers and electronics engineers seeking to implement reliable, efficient power components into demanding circuit designs.
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SSM3K15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FU
High Speed Switching Applications
Unit: mm
Analog Switch Applications
Small package Low on resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS 30 V Gate-source voltage VGSS 20 V
DC ID 100
Drain current m A
Pulse IDP 200
Drain power dissipation (Ta 25C) PD (Note) 150 m W
JEDEC ―
Channel temperature Tch 150 C Storage temperature Tstg 55~150 C JEITA SC-70
TOSHIBA 2-2E1E
Note: Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.6 mm2 3) Weight: 0.006 g (typ.)
0.6 mm
1.0 mm
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Page Summary Contents For Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU Data Sheet
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 6 |
| File Size | 250.19 KB |
| Published | June 05, 2026 |
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Frequently Asked Questions
What precautions must be taken when handling the individual devices?
Operators should wear anti-static clothing, and containers or objects that come into direct contact with the device must be made of anti-static materials.
What are the key maximum electrical ratings for this component?
The maximum drain-source voltage (V_D) is 30 V, and the gate-source voltage (GSS) limit is +/- 20 V.
Under what conditions should I be aware of usage limitations?
This product is not intended or warranted for use in applications requiring extraordinarily high quality or reliability, such as medical instruments or aircraft systems.
What is the typical drain power dissipation at standard temperature?
The rated maximum drain power dissipation (P_D) at an ambient temperature of 25°C is 150 mW.