Toshiba Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU Data Sheet
Summary
This datasheet summarizes the Toshiba SSM3K05FU, a high-performance N Channel MOSFET ideal for fast switching applications. Featuring low on-resistance and housed in a compact SC-70 package, this transistor ensures reliable operation in demanding electronic designs. The manual provides comprehensive technical guidance, detailing key electrical characteristics, maximum ratings, handling precautions, and usage guidelines necessary for engineers building general consumer and industrial electronics circuits.
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SSM3K05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K05FU
High Speed Switching Applications
Unit: mm
Small package Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω max (@VGS = 2.5 V) Low gate threshold voltage
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS 20 V Gate-source voltage VGSS 12 V
DC ID 400
Drain current m A
Pulse IDP 800
Drain power dissipation (Ta 25°C) 150 m W
(Note 1)
Channel temperature Tch 150 °C JEDEC ― Storage temperature range Tstg 55~150 °C
JEITA SC-70 Note 1: Mounted on FR4 board. TOSHIBA 2-2E1E
(25.4 mm 25.4 mm 1.6 t, Cu pad: 0.6 mm2 3)
Weight: 0.006 g (typ.)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Page Summary Contents For Toshiba Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU Data Sheet
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 5 |
| File Size | 172.95 KB |
| Published | June 01, 2026 |
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