Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Data Manual
Summary
The SSM3J02F is a high-speed P-Channel MOSFET power management switch designed for efficient operation in various high-speed switching applications. This manual provides comprehensive documentation, including detailed electrical characteristics, maximum ratings, rigorous physical dimensions, and essential handling precautions. It is intended for design engineers and electronics professionals who require reliable components for general electronic equipment, such as computers, industrial robotics, and domestic appliances, ensuring performance within specified operating ranges.
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SSM3J02F
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02F
Power Management Switch
Unit: mm
High Speed Switching Applications
Small package Low on resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS 30 V Gate-source voltage VGSS 10 V
DC ID 600
Drain current m A
Pulse IDP 1200
Drain power dissipation (Ta 25°C) PD 200 m W
JEDEC TO-236MOD
Channel temperature Tch 150 °C
JEITA SC-59
Storage temperature range Tstg 55~150 °C
TOSHIBA 2-3F1F
Weight: 0.012 g (typ.)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Page Summary Contents For Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Data Manual
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 5 |
| File Size | 152.56 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
What precautions must be taken when handling this device?
The environment must be protected against electrostatic electricity. Operators should wear anti-static clothing, and contact materials must also be anti-static.
What voltage is required for the transistor to reliably turn on?
A recommended operating gate-source voltage (Gs) of 2.5 V or higher is needed.
What are the maximum drain current and power dissipation ratings?
The Drain current (Id) is rated at 600 mA, and the Drain power dissipation (Pd) is 200 mW.
Can this device be used in life support or critical medical equipment?
No; it is not warranted for usage in instruments requiring extraordinary reliability, such as safety devices or medical instruments.