Toshiba TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A Data Manual

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SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A

TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A AC POWER CONTROL APPLICATIONS

Unit: mm

Repetitive Peak Off−State Voltage : VDRM = 400, 600V R.M.S On−State Current : IT (RMS) = 16A High Commutating (dv / dt) Isolation Voltage : VISOL = 1500V AC

MAXIMUM RATINGS

CHARACTERISTIC SYMBOL RATING UNIT

SM16GZ47 SM16GZ47A 400

Repetitive Peak

Off−State Voltage SM16JZ47

SM16JZ47A

R.M.S On−State Current (Full Sine Waveform Tc = 73°C) IT (RMS) 16 A

150 (50Hz) Peak One Cycle Surge On−State

Current (Non−Repetitive) ITSM

165 (60Hz)

I2t Limit Value I2t 112.5 A2s JEDEC ― JEITA ―

Critical Rate of Rise of On−State Current (Note 1) di / dt 50 A / µs TOSHIBA 13−10H1A

Weight: 1.7g

Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG (AV) 0.5 W Peak Gate Voltage VGM 10 V

Note 1: di / dt Test condition

Peak Gate Current IGM 2 A VDRM = 0.5 × Rated ITM ≤ 25A

Junction Temperature Tj −40~125 °C

tgw ≥ 10µs

Storage Temperature Range Tstg −40~125 °C

tgr ≤ 250ns

Isolation Voltage (AC, t = 1 min.) VISOL 1500 V i GP = IGT × 2.0