Toshiba TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 Data Sheet
Summary
This data sheet provides comprehensive technical details for the 1SV325, a high-performance Toshiba semiconductor diode/capacitor designed for precision applications like small-size tuners in VCO/TCXO circuits. It covers key operational specifications including capacitance ratios, low series resistance values, and maximum ratings against temperature and voltage fluctuation. This manual is essential for electrical engineers and hardware designers who require reliable components for general electronics, measuring equipment, and advanced RF circuit development, ensuring proper integration and safe application within specified operating parameters.
Page 1 Text Content
1SV325
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV325
TCXO/VCO
Unit: mm
High capacitance ratio: C1 V/C4 V = 4.3 (typ.) Low series resistance: rs = 0.4 Ω (typ.) Useful for small size tuner.
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature range Tstg 55~125 °C
JEDEC ― JEITA ― TOSHIBA 1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Reverse voltage VR IR 1 A 10 V Reverse current IR VR 10 V 3 n A Capacitance C1 V VR 1 V, f 1 MHz 44 49.5 p F Capacitance C4 V VR 4 V, f 1 MHz 9.2 12 p F Capacitance ratio C1 V/C4 V 4 4.3 Series resistance rs VR 4 V, f 100 MHz 0.4 0.8
Note: Signal level when capacitance is measured: Vsig 500 m Vfms
Marking
Page Summary Contents For Toshiba TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 Data Sheet
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 3 |
| File Size | 92.48 KB |
| Published | June 01, 2026 |
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