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Toshiba TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Data Sheet

Summary

This low noise PNP transistor is engineered specifically for high-performance audio frequency amplification. Featuring excellent linearity and a minimal noise figure (0.2dB), it serves as a highly reliable component, complementary to the 2SC3324 series. The manual provides comprehensive specifications, including absolute maximum ratings, electrical characteristics, and detailed safety guidelines crucial for designers integrating this unit into general electronics applications—such as consumer goods, industrial controls, and measuring equipment.

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2SA1312

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1312

Audio Frequency Low Noise Amplifier Applications

Unit: mm

• High voltage: VCEO = −120 V • Excellent h FE linearity: h FE (IC = −0.1 m A)/ h FE (IC = −2 m A) h= 0.95 (typ.) • High h FE: h FE = 200~700 • Low noise: NF (2) = 0.2d B (typ.), 3d B (max) at f = 1 k Hz • Complementary to 2SC3324 • Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −120 V

Collector-emitter voltage VCEO −120 V

Emitter-base voltage VEBO −5 V

Collector current IC −100 m A

Base current IB −20 m A

JEDEC TO-236MOD

Collector power dissipation PC 150 m W

JEITA SC-59

Junction temperature Tj 125 °C

TOSHIBA 2-3F1A

Storage temperature range Tstg −55~125 °C

Weight: 0.012 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Marking

Page Summary Contents For Toshiba TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Data Sheet

Page 1 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit: mm • High voltage: VCEO = −120 V • Excellent h FE linearity: h FE (IC...
Page 2 2SA1312 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −120 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB ...
Page 3 2SA1312
Page 4 2SA1312
Page 5 2SA1312 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability ...

Manual Details

Brand Toshiba
Pages 5
File Size 622.31 KB
Published June 02, 2026
30 views

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Frequently Asked Questions

What is the typical noise figure at a frequency of 1 kHz?

The Noise Figure NF(2) is typically 0.2dB, with a maximum value of 3dB.

Can this product be used in life-critical applications like medical devices or airplanes?

No; it is not warranted for usage in instruments that require extraordinarily high quality/reliability, such as medical instruments or airplane equipment.

What is the maximum permissible collector power dissipation (P_C)?

The absolute maximum rating for collector power dissipation (P_C) is 150 mW.

What precautions must be taken regarding reliability under heavy loads?

One must review the Toshiba Semiconductor Reliability Handbook and individual reliability data to design appropriate reliability.