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Philips Semiconductors BUK446-800A B Data Sheet

Summary

High-performance N-channel PowerMOS transistor (BUK446) designed for demanding power switching applications up to 800V. This comprehensive datasheet provides critical technical parameters, including static electrical characteristics, dynamic on-state resistance data, and thermal impedance curves. It offers essential design guidance—including safe operating areas—for engineers developing Switching Mode Power Supplies (SMPS), motor control units, DC/DC converters, or industrial welding systems.

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Philips Semiconductors Product Specification

Power MOS transistor BUK446-800A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK446 -800A -800B

The device is intended for use in VDS Drain-source voltage

Switched Mode Power Supplies ID Drain current (DC) 2.0 1.7 (SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state in general purpose switching resistance applications.

PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION

gate drain

source case isolated

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage

ID Drain current (DC) Ths = 25 ˚C 2.0 1.7 ID Drain current (DC) Ths = 100 ˚C 1.3 1.1 IDM Drain current (pulse peak value) Ths = 25 ˚C 6.8 Ptot Total power dissipation Ths = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-hs Thermal resistance junction to with heatsink compound 4.16 K/W heatsink

Rth j-a Thermal resistance junction to K/W

ambient

May 1995 Rev 1.200

Page Summary Contents For Philips Semiconductors BUK446-800A B Data Sheet

Page 1 Philips Semiconductors Product Specification Power MOS transistor BUK446-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power t...
Page 2 Philips Semiconductors Product Specification Power MOS transistor BUK446-800A/B STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS D...
Page 3 Philips Semiconductors Product Specification Power MOS transistor BUK446-800A/B Normalised Power Derating Zth / (K/W) BUKx46-hv with heatsink compound 0.01 D = tp Ths / C t / s Fig.1. Normalised power...
Page 4 Philips Semiconductors Product Specification Power MOS transistor BUK446-800A/B ID / A BUK4y6-800A VGS(TO) / V Tj / C = VGS / V Tj / C Fig.7. Typical transfer characteristics. Fig.10. Gate threshold v...
Page 5 Philips Semiconductors Product Specification Power MOS transistor BUK446-800A/B VGS / V BUK4y6-800 IF / A BUK4y6-800A VDS / V =160 Tj / C = 150 QG / n C VSDS / V Fig.13. Typical turn-on gate-charge ch...
Page 6 Philips Semiconductors Product Specification Power MOS transistor BUK446-800A/B MECHANICAL DATA Dimensions in mm 10.2 max Net Mass: 2 g max max 3.0 2.9 max seating max plane 3.5 max not tinned 13.5 mi...
Page 7 Philips Semiconductors Product Specification Power MOS transistor BUK446-800A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product...

Manual Details

Brand Philips
Pages 7
File Size 64.20 KB
Published July 04, 2026
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Frequently Asked Questions

What is the maximum drain-source voltage (VDS)?

The maximum VDS is 800 V.

How do I find the device's resistance when it's on?

Check the R DS(ON) value; for BUK446-800A, it is 2.7 Ω at $V_{GS}=10V$.

What limits its sustained power output?

The maximum total power dissipation ($P_T$) is 30 W tot at 25 °C.

Is this device suitable for high-stress environments?

No, and it's explicitly warned against using the device in life support applications.