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PHILIPS BUK456-800A Data Sheet Manual

Summary

The BUK456-800A/B is an N-channel PowerMOS transistor designed for high-reliability switching in industrial and power conversion systems, including SMPS, motor control, and complex DC/AC converters. This comprehensive data sheet serves as a detailed technical guide for electrical engineers and designers. It covers all critical operational parameters: absolute maximum ratings, static characteristics (like $R_{DS(ON)}$), dynamic performance curves, thermal impedance analysis, and advanced derating figures necessary for optimizing high-power switching circuits while ensuring optimal device longevity and performance stability.

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查询BUK 456-800A供应商 Philips Semiconductors Product Specification

Power MOS transistor BUK456-800A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -800A -800B

The device is intended for use in VDS Drain-source voltage

Switched Mode Power Supplies ID Drain current (DC) 3.5 (SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state in general purpose switching resistance applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION

gate drain

source tab drain

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage

ID Drain current (DC) Tmb = 25 ˚C 4.0 3.5 ID Drain current (DC) Tmb = 100 ˚C 2.5 2.2 IDM Drain current (pulse peak value) Tmb = 25 ˚C Ptot Total power dissipation Tmb = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance junction to 1.0 K/W mounting base

Rth j-a Thermal resistance junction to K/W

ambient

May 1995 Rev 1.200

Page Summary Contents For PHILIPS BUK456-800A Data Sheet Manual

Page 1 查询BUK 456-800A供应商 Philips Semiconductors Product Specification Power MOS transistor BUK456-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT fi...
Page 2 Philips Semiconductors Product Specification Power MOS transistor BUK456-800A/B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS D...
Page 3 Philips Semiconductors Product Specification Power MOS transistor BUK456-800A/B PD% Normalised Power Derating Zth j-mb / (K/W) BUKx56-hv 0.01 tp D = tp Tmb / C t / s Fig.1. Normalised power dissipatio...
Page 4 Philips Semiconductors Product Specification Power MOS transistor BUK456-800A/B ID / A BUK4y6-800A VGS(TO) / V Tj / C = VGS / V Tj / C Fig.7. Typical transfer characteristics. Fig.10. Gate threshold v...
Page 5 Philips Semiconductors Product Specification Power MOS transistor BUK456-800A/B VGS / V BUK4y6-800 IF / A BUK4y6-800A VDS / V =160 Tj / C = 150 QG / n C VSDS / V Fig.13. Typical turn-on gate-charge ch...
Page 6 Philips Semiconductors Product Specification Power MOS transistor BUK456-800A/B MECHANICAL DATA Dimensions in mm Net Mass: 2 g max 10,3 max 5,9 min 15,8 max 3,03,0 max not tinned 13,5 min 1,3 max (2x)...
Page 7 Philips Semiconductors Product Specification Power MOS transistor BUK456-800A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product...