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Philips PowerMOS Transistor BUK444-800A Data Sheet User Guide

Summary

Product specification for the Philips BUK444-800A/B PowerMOS N-channel enhancement mode field-effect power transistor in SOT186 (full-pack) isolated plastic package. Rated for 800V drain-source breakdown voltage, 1.4A (A variant) or 1.2A (B variant) DC drain current at 25 degrees C, 30W total power dissipation, and 6.0 or 8.0 Ohms on-state resistance respectively. Gate threshold 2.1-4.0V. Applications include switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching.

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查询BUK444-800供应商 Philips Semiconductors Product Specification

Power MOS transistor BUK444-800A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -800A -800B

The device is intended for use in VDS Drain-source voltage

Switched Mode Power Supplies ID Drain current (DC) 1.4 1.2 (SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state 6.0 8.0 in general purpose switching resistance applications.

PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION

gate drain

source case isolated

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage

ID Drain current (DC) Ths = 25 ˚C 1.4 1.2 ID Drain current (DC) Ths = 100 ˚C 0.9 0.75 IDM Drain current (pulse peak value) Ths = 25 ˚C 5.6 4.8 Ptot Total power dissipation Ths = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-hs Thermal resistance junction to with heatsink compound 4.17 K/W heatsink

Rth j-a Thermal resistance junction to K/W

ambient

April 1993 Rev 1.100

Page Summary Contents For Philips PowerMOS Transistor BUK444-800A Data Sheet User Guide

Page 1 查询BUK444-800供应商 Philips Semiconductors Product Specification Power MOS transistor BUK444-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT fiel...
Page 2 Philips Semiconductors Product Specification Power MOS transistor BUK444-800A/B STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS D...
Page 3 Philips Semiconductors Product Specification Power MOS transistor BUK444-800A/B Normalised Power Derating PD% Zth / (K/W) BUKx44-hv with heatsink compound tp D = tp Ths / C t / s Fig.1. Normalised pow...
Page 4 Philips Semiconductors Product Specification Power MOS transistor BUK444-800A/B BUK454-800A VGS(TO) / V ID / A Tj / C = VGS / V Tj / C Fig.7. Typical transfer characteristics. Fig.10. Gate threshold v...
Page 5 Philips Semiconductors Product Specification Power MOS transistor BUK444-800A/B VGS / V BUK454-800 IF / A BUK454-800A VDS / V =160 Tj / C = 150 QG / n C VSDS / V Fig.13. Typical turn-on gate-charge ch...
Page 6 Philips Semiconductors Product Specification Power MOS transistor BUK444-800A/B MECHANICAL DATA Dimensions in mm 10.2 max Net Mass: 2 g max max 3.0 2.9 max seating max plane 3.5 max not tinned 13.5 mi...
Page 7 Philips Semiconductors Product Specification Power MOS transistor BUK444-800A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product...