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Philips Semiconductors PowerMOS Transistor BUK110-50GL Data Sheet

Summary

This advanced Logic Level TOPFET is a robust, general-purpose power MOSFET designed for high-reliability switching in demanding environments, including automotive systems. This product specification details its capabilities as an overload-protected switch capable of handling challenging loads like lamps, motors, and solenoids. Key features include integrated overvoltage clamping, comprehensive protection against short circuits and overheating, and efficient operation from low 5V logic inputs. Ideal for engineers requiring a dependable, high-power solution with advanced built-in safety features.

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查询BUK110-50GL供应商 Philips Semiconductors Product specification

Power MOS transistor BUK110-50GL Logic level TOPFET

DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power

MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage

mount envelope, intended as a ID Continuous drain current general purpose switch for PD Total power dissipation automotive systems and other Tj Continuous junction temperature ˚C applications. RDS(ON) Drain-source on-state resistance mΩ

VIS = 5 V

APPLICATIONS General controller for driving lamps motors solenoids heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage DRAIN Low on-state resistance Overload protection against over temperature Overload protection against

short circuit load

Latched overload protection CLAMP

POWER

reset by input

INPUT

5 V input level RIG MOSFET

Low threshold voltage also allows 5 V control Control of power MOSFET

LOGIC AND

and supply of overload

protection circuits PROTECTION

derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION

TOPFET

input

drain source mb drain

June 1996 Rev 1.000

Page Summary Contents For Philips Semiconductors PowerMOS Transistor BUK110-50GL Data Sheet

Page 1 查询BUK110-50GL供应商 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT...
Page 2 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL ...
Page 3 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j-mb Jun...
Page 4 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET TRANSFER CHARACTERISTICS Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transc...
Page 5 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET PD% Normalised Power Derating Zth / (K/W) BUK110-50GL 0.01 D = tp Tmb / C t / s Fig.2. Normalised limit...
Page 6 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET RDS(ON) / m Ohm BUK110-50GL Normalised RDS(ON) = f(Tj) 3.53VIS / V = ID / A Tj / C Fig.8. Typical on-st...
Page 7 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET Energy & Time BUK110-50GL IIS / u A BUK110-50GL 1.5 Energy / J Time / ms Tj(TO) Tmb / C VIS / V Fig...
Page 8 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET VDD VDD = VCL RL LD : adjust for correct ID TOPFET TOPFET VIS VIS ID measure ID measure Fig.20. Test ci...
Page 9 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET EDSM% Iiso normalised to 25 C Tmb / C Tj / C Fig.26. Normalised limiting clamping energy. Fig.29. Norma...
Page 10 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET MECHANICAL DATA Dimensions in mm 10.3 max 4.5 max 1.4 max Net Mass: 1.4 g 11 max 0.85 max Fig.31. SOT40...
Page 11 Philips Semiconductors Product specification Power MOS transistor BUK110-50GL Logic level TOPFET DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifica...

Manual Details

Brand Philips
Pages 11
File Size 112.73 KB
Published July 15, 2026
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Frequently Asked Questions

What is the continuous drain-source voltage (VDS) rating?

The maximum continuous drain-source voltage rated is 50 V.

How does the device protect against overvoltage transients?

Above a drain-source voltage of 50 V, an active MOSFET turns on to clamp the overvoltage transients.

What are the key components or features of this TOPFET?

It includes vertical power DMOS output stages, low on-state resistance, and latching overload protection.

What is the maximum total power dissipation (Pd)?

The maximum continuous total power dissipation is 125 W at room temperature (T ≤ 25 °C).