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Philips Semiconductors PowerMOS Transistor BUK108-50GS TOPFET Data Sheet User Manual

Summary

Product specification for the Philips BUK108-50GS PowerMOS TOPFET transistor, a monolithic temperature and overload-protected power MOSFET in SOT404 surface-mount package. Features vertical power DMOS output stage, low on-state resistance (100 milliohms), over-temperature and short-circuit load protection with latched reset, 10V input level with 5V control compatibility, ESD protection, and overvoltage clamping for inductive loads. Designed for automotive general-purpose switching of lamps, moto

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查询BUK108-50GS供应商 Philips Semiconductors Product specification

Power MOS transistor BUK108-50GS TOPFET

DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET

in a 3 pin plastic surface mount VDS Continuous drain source voltage

envelope, intended as a general ID Continuous drain current purpose switch for automotive PD Total power dissipation systems and other applications. Tj Continuous junction temperature ˚C

RDS(ON) Drain-source on-state resistance mΩ

APPLICATIONS VIS = 10 V General controller for driving lamps motors solenoids heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage DRAIN Low on-state resistance Overload protection against over temperature Overload protection against

short circuit load

Latched overload protection CLAMP

POWER

reset by input

INPUT

10 V input level RIG MOSFET

Low threshold voltage also allows 5 V control Control of power MOSFET

LOGIC AND

and supply of overload

protection circuits PROTECTION

derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION

TOPFET

input drain source

mb drain

June 1996 Rev 1.000

Page Summary Contents For Philips Semiconductors PowerMOS Transistor BUK108-50GS TOPFET Data Sheet User Manual

Page 1 查询BUK108-50GS供应商 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload pr...
Page 2 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CO...
Page 3 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j-mb Junction to mou...
Page 4 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET INPUT CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is t...
Page 5 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET REVERSE DIODE CHARACTERISTICS Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VSDS Forward voltage IS =...
Page 6 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET ID / A BUK108-50GS ID / A BUK108-50GS VDS / V VIS / V Fig.6. Typical output characteristics, Tj = 25 ˚C. Fig.9. Typ...
Page 7 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET td sc / ms BUK108-50GS ID / A BUK108-50GS 0.01 0.1 PDS / k W VDS / V Fig.12. Typical overload protection characteri...
Page 8 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET IIS / m A BUK108-50GS RESISTIVE TURN-ON BUK108-50GS VIS / V PROTECTION LATCHED ID / A RESET NORMAL VDS / V10% 10% t...
Page 9 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET INDUCTIVE TURN-ON BUK108-50GS V(CL)DSS VDD VDD VIS / V td on tr TOPFET -ID/100 ID / A D.U.T. 10% Schottky R 01 RIS ...
Page 10 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET Iisl normalised to 25 C VDDP(P) / V BUK108-50GS Tj / C VIS / V Fig.30. Normalised input current (protection latched...
Page 11 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET MECHANICAL DATA Dimensions in mm 10.3 max 4.5 max 1.4 max Net Mass: 1.4 g 11 max 0.85 max Fig.32. SOT404 : centre p...
Page 12 Philips Semiconductors Product specification Power MOS transistor BUK108-50GS TOPFET DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for pr...