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PHILIPS PowerMOS Transistor BUK210-50Y TOPFET High Side Switch Data Manual

Summary

This datasheet provides complete specifications for the Philips BUK210-50Y TOPFET high-side power switch, a monolithic protected single-channel device in a 5-pin SOT263B-01 plastic package. It details load current limiting, overtemperature protection, diagnostic status indication, and application guidance for driving lamps, motors, solenoids, and heaters in automotive and industrial systems.

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查询BUK210-50Y供应商 Philips Semiconductors Product specification

Power MOS transistor BUK210-50Y TOPFET high side switch

DESCRIPTION QUICK REFERENCE DATA Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT protected power switch in

TOPFET2 technology assembled in IL Nominal load current (ISO)

a 5 pin plastic package.

APPLICATIONS SYMBOL PARAMETER MAX. UNIT General controller for driving VBG Continuous off-state supply voltage

lamps, motors, solenoids, heaters. IL Continuous load current

Tj Continuous junction temperature ˚C RON On-state resistance Tj = 25˚C mΩ

FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power Trench MOS Low on-state resistance CMOS logic compatible

Very low quiescent current Overtemperature protection

STATUS

Load current limiting

POWER

Latched overload and short circuit protection MOSFET

INPUT

Overvoltage and undervoltage

CONTROL &

shutdown with hysteresis On-state open circuit load

PROTECTION

detection Diagnostic status indication

CIRCUITS

Voltage clamping for turn off of inductive loads

ESD protection on all pins LOAD

Reverse battery, overvoltage

GROUND RG

and transient protection

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT263B-01 PIN CONFIGURATION SYMBOL PIN DESCRIPTION

mb mb

Input

TOPFET

Drain Protection supply

Source MBL267Front view

Fig. 2. Fig. 3.

tab Drain

November 2002 Rev 2.000

Page Summary Contents For PHILIPS PowerMOS Transistor BUK210-50Y TOPFET High Side Switch Data Manual

Page 1 查询BUK210-50Y供应商 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic single channel high side SYMBOL PARAMET...
Page 2 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PAR...
Page 3 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch STATIC CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwi...
Page 4 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch INPUT CHARACTERISTICS 9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ...
Page 5 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tm...
Page 6 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch OVERLOAD PROTECTION CHARACTERISTICS 5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typic...
Page 7 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch IBG(ON) / m A BUK210-50Y UNDERVOLTAGE CLAMPING SHUTDOWN OVERVOLTAGE TOPFET SHUTDOWN IS HSS VLG OPER...
Page 8 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch IB / A BUK210-50Y IL(OC) / A BUK210-50Y 10E-9 typ. OC OC Tj / Tj / Fig.10. Typical supply quiescent...
Page 9 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch VSG(LOW) / V BUK210-50Y IS / m A BUK210-50Y -50 OC Tj / VSG / V Fig.16. Typical status low characte...
Page 10 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch VBG / V BUK210-50Y VLG / V BUK210-50Y -10 IG = IL = OC OC Tj / Tj / Fig.22. Typical battery to grou...
Page 11 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch IL(lim) / A BUK210-50Y VBL(TO) / V BUK215-50Y typ. 25˚C VBG / V -50 OC 200Tj / Fig.28. Short circui...
Page 12 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead...
Page 13 Philips Semiconductors Product specification Power MOS transistor BUK210-50Y TOPFET high side switch DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS1 STATUS2 Objective data Develop...

Manual Details

Brand Philips
Pages 13
File Size 189.68 KB
Published June 17, 2026
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Frequently Asked Questions

What protection mechanisms are included in this TOPFET high side switch?

It includes overtemperature protection, load current limiting, latched overload/short circuit protection, and detection for open-circuit loads.

What is the continuous junction temperature limit for operation?

The maximum continuous junction temperature (Tj) is 150 °C.

How does the device perform when handling inductive loads during turn-off?

During turn-off, the load pin voltage goes negative with respect to ground. The non-repetitive clamping energy limit must be observed (-150 mJ).

What is the on-state resistance (R_on) at standard operating conditions?

At 25°C, under a 10A load for 300 µs, the typical R_on on a general controller is 38 mΩ.