Philips PowerMOS Transistor BUK455-60A Data Sheet Manual
Summary
Philips semiconductor discrete component datasheet. Documents maximum ratings (voltage, current, power dissipation), thermal characteristics, DC/AC electrical specifications, typical performance curves, S-parameters for RF applications, package mechanical drawings, marking codes, and ESD handling precautions in antistatic packaging.
Page 1 Text Content
查询BUK455-60A供应商 Philips Semiconductors Product Specification
Power MOS transistor BUK455-60A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -60A -60B
The device is intended for use in VDS Drain-source voltage
Switched Mode Power Supplies ID Drain current (DC) (SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and Tj Junction temperature ˚C
in automotive and general purpose RDS(ON) Drain-source on-state 0.038 0.045
switching applications. resistance
PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION
gate drain
source tab drain
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage
ID Drain current (DC) Tmb = 25 ˚C ID Drain current (DC) Tmb = 100 ˚C IDM Drain current (pulse peak value) Tmb = 25 ˚C Ptot Total power dissipation Tmb = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to 1.2 K/W mounting base
Rth j-a Thermal resistance junction to K/W
ambient
April 1993 Rev 1.100
Page Summary Contents For Philips PowerMOS Transistor BUK455-60A Data Sheet Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 7 |
| File Size | 54.73 KB |
| Published | June 18, 2026 |
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