Philips PowerMOS Transistor BUK446-800A B Data Sheet Manual
Summary
The BUK446-800A/B is a high-voltage, N-channel PowerMOS transistor engineered for robust switching in demanding power management systems. This comprehensive data sheet provides engineers with all necessary technical specifications, including absolute maximum ratings, detailed operational limits, and thermal performance curves. It covers static characteristics (like on-state resistance) as well as dynamic switching behaviors crucial for reliable circuit design. The device is perfectly suited for use in Switched Mode Power Supplies (SMPS), motor control applications, DC/DC converters, AC/DC rectifiers, and professional welding equipment.
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查询BUK446-800A供应商 Philips Semiconductors Product Specification
Power MOS transistor BUK446-800A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK446 -800A -800B
The device is intended for use in VDS Drain-source voltage
Switched Mode Power Supplies ID Drain current (DC) 2.0 1.7 (SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state in general purpose switching resistance applications.
PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION
gate drain
source case isolated
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage
ID Drain current (DC) Ths = 25 ˚C 2.0 1.7 ID Drain current (DC) Ths = 100 ˚C 1.3 1.1 IDM Drain current (pulse peak value) Ths = 25 ˚C 6.8 Ptot Total power dissipation Ths = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink compound 4.16 K/W heatsink
Rth j-a Thermal resistance junction to K/W
ambient
May 1995 Rev 1.200
Page Summary Contents For Philips PowerMOS Transistor BUK446-800A B Data Sheet Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 7 |
| File Size | 66.11 KB |
| Published | July 15, 2026 |
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Frequently Asked Questions
What is the maximum drain-source voltage (Vds) rating?
The device has a maximum Vd-s strength of 800 V.
What are the on-state electrical characteristics?
The typical Drain-source on-state resistance (Rds(ON)) is 3.0 Ω for BUK446-800A and 4.0 Ω for BUK446-800B when driven with a 1.5 A source current at 10 Vgs.