PHILIPS PowerMOS Transistor BUK446-1000B Data Sheet
Summary
The BUK446-1000B is a rugged N-channel PowerMOS field-effect transistor, built for demanding high-voltage switching applications. It is ideal for use in Switched Mode Power Supplies (SMPS), motor control circuits, and DC/DC converters requiring robust performance up to 1000V. This technical manual provides comprehensive specifications, detailing static characteristics, dynamic switching parameters, absolute maximum ratings, thermal derating curves, and safe operating areas, ensuring engineers can design reliable systems into general purpose power electronics.
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查询BUK446-1000B供应商 Philips Semiconductors Product Specification
Power MOS transistor BUK446-1000B
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a
plastic full-pack envelope. VDS Drain-source voltage
The device is intended for use in ID Drain current (DC) 1.5 Switched Mode Power Supplies Ptot Total power dissipation (SMPS), motor control, welding, RDS(ON) Drain-source on-state DC/DC and AC/DC converters, and resistance in general purpose switching applications.
PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION
gate drain
source case isolated
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage ID Drain current (DC) Ths = 25 ˚C 1.5 ID Drain current (DC) Ths = 100 ˚C 1.0 IDM Drain current (pulse peak value) Ths = 25 ˚C Ptot Total power dissipation Ths = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-hs Thermal resistance junction to with heatsink compound 4.16 K/W
heatsink
Rth j-a Thermal resistance junction to K/W
ambient
May 1995 Rev 1.200
Page Summary Contents For PHILIPS PowerMOS Transistor BUK446-1000B Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 7 |
| File Size | 65.48 KB |
| Published | July 04, 2026 |
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Frequently Asked Questions
What is the maximum drain-source voltage rating for this transistor?
The Drain-Source voltage (VDS) can handle up to 1000 V.
Is this device approved for life support systems?
No, these products are not designed for use in life support appliances or devices.
What is the peak drain current capacity at room temperature?
The pulse peak current (Idm) is rated up to 6 A when the junction temperature is 25°C.
How should I manage heat dissipation during operation?
It requires a heatsink (thj-hs), and thermal resistance values are specified for calculations.