Philips Semiconductors PowerMOS transistor BUK110-50DL Data Sheet
Summary
This high-performance logic-level TOPFET PowerMOS transistor is engineered for reliable, robust power switching in demanding industrial and automotive applications. Featuring ultra-low resistance and integrated multi-stage protections—including overtemperature, short circuit, and overvoltage clamping—it provides superior durability and control for motors, solenoids, and lighting circuits. The manual offers comprehensive technical specifications (Absolute Maximum Ratings, Thermal characteristics) required by electrical engineers designing intelligent power management systems that demand high reliability and protection against system faults.
Page 1 Text Content
查询BUK110-50DL供应商 Philips Semiconductors Product specification
Power MOS transistor BUK110-50DL Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power
MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage
mount envelope, intended as a ID Continuous drain current general purpose switch for PD Total power dissipation automotive systems and other Tj Continuous junction temperature ˚C applications. RDS(ON) Drain-source on-state resistance mΩ
APPLICATIONS IISL Input supply current VIS = 5 V µA General controller for driving lamps motors solenoids heaters
FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage DRAIN Low on-state resistance Overload protection against over temperature Overload protection against
short circuit load
Latched overload protection CLAMP
POWER
reset by input
INPUT
5 V logic compatible input level RIG MOSFET
Control of power MOSFET and supply of overload protection circuits
LOGIC AND
derived from input
Lower operating input current PROTECTION
permits direct drive by micro-controller ESD protection on input pin Overvoltage clamping for turn
off of inductive loads SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION
TOPFET
input
drain source mb drain
June 1996 Rev 1.000
Page Summary Contents For Philips Semiconductors PowerMOS transistor BUK110-50DL Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 10 |
| File Size | 93.20 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
What limits are applied regarding overvoltage transients?
At a drain-source voltage above 50 V, the power MOSFET actively turns on to clamp these transience.
Is this transistor protected against multiple types of overload?
Yes, it offers protection for both over temperature (DDP(T)) and short circuit load conditions (DDP(P)).
What must be done after an overload shuts down the device?
The TOPFET switches off when an overload threshold is reached and remains latched off until reset.
Does this component have built-in ESD protection?
Yes, it features Electrostatic Discharge (ESD) protection on the input pin.