Philips Semiconductors PowerMOS Transistor BUK436W-200A Product Specification, User Manual
Summary
This datasheet provides complete specifications for the Philips BUK436W-200A and BUK436W-200B N-channel enhancement mode PowerMOS field-effect transistors in a TO247 (SOT429) plastic package. It details electrical characteristics, thermal ratings, and application guidance for switched mode power supplies, motor control, welding equipment, and DC-DC converter designs.
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Philips Semiconductors Product Specification
Power MOS transistor BUK436W-200A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -200A -200B
The device is intended for use in VDS Drain-source voltage Switched Mode Power Supplies ID Drain current (DC)
(SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state 0.16 0.2 in general purpose switching resistance applications.
PINNING - SOT429 (TO247) PIN CONFIGURATION SYMBOL PIN DESCRIPTION gate drain source tab drain
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage
ID Drain current (DC) Tmb = 25 ˚C ID Drain current (DC) Tmb = 100 ˚C IDM Drain current (pulse peak value) Tmb = 25 ˚C Ptot Total power dissipation Tmb = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to 1.0 K/W mounting base
Rth j-a Thermal resistance junction to K/W
ambient
July 1997 Rev 1.000
Page Summary Contents For Philips Semiconductors PowerMOS Transistor BUK436W-200A Product Specification, User Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 7 |
| File Size | 73.06 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What is the specified maximum drain-source voltage (VDS)?
The absolute maximum VDS is 200 V.
How is the product rated for continuous total power dissipation?
The maximum total power dissipation (P) is 125 W total.
What is the internal source inductance measured from the package?
It is 12.5 nH (measured from the package to the source bond pad).
Is this device suitable for critical life support applications?
No, these products are not designed for use in life support appliances or systems.