Philips Semiconductors Linear Products BUK444-200A Data Handbook
Summary
This high-power N-channel PowerMOS transistor is engineered for demanding switching applications requiring robust performance up to 200V drain-source voltage. The comprehensive product manual provides crucial engineering details, including quick reference data, static parameters, dynamic characteristics, and detailed graphs for thermal impedance suitable for design validation. It is ideally suited for integration into Switched Mode Power Supplies (SMPS), DC/AC converters, motor control systems, welding equipment, and various general-purpose power switching solutions.
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查询BUK444-200A供应商 Philips Semiconductors Product Specification
Power MOS transistor BUK444-200A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -200A -200B
The device is intended for use in VDS Drain-source voltage
Switched Mode Power Supplies ID Drain current (DC) 5.3 4.7 (SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state 0.4 0.5 in general purpose switching resistance applications.
PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION
gate drain
source case isolated
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage
ID Drain current (DC) Ths = 25 ˚C 5.3 4.7 ID Drain current (DC) Ths = 100 ˚C 3.3 3.0 IDM Drain current (pulse peak value) Ths = 25 ˚C Ptot Total power dissipation Ths = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink compound K/W heatsink
Rth j-a Thermal resistance junction to K/W
ambient
April 1993 Rev 1.100
Page Summary Contents For Philips Semiconductors Linear Products BUK444-200A Data Handbook
Manual Details
| Brand | Philips |
|---|---|
| Pages | 7 |
| File Size | 58.05 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the typical Drain-Source On-state resistance between the models?
For BUK444-200A, the typical $R_{DS(ON)}$ is 0.4 Ω; for BUK444-200B, it is 0.5 Ω.
Are these specific transistors rated for life support applications?
No, these products are not designed for use in life support appliances, devices, or systems where malfunction could result in personal injury.
How does operating temperature affect the continuous drain current capacity?
The continuous drain current rating decreases as temperature increases; for example, at 120°C, the maximum rated current is only 80% of the nominal value.