Philips Semiconductors PHE13002AU Data Handbook
Summary
This is a high-voltage, planar-passivated npn power switching transistor designed for rigorous performance in electronic lighting ballast, converters, and inverter circuits. The product manual provides comprehensive engineering specifications, including absolute maximum ratings, detailed static and dynamic characteristics, thermal impedance data, and precise switching times for both resistive and inductive loads. It serves as a vital resource for engineers requiring reliable high-speed power management solutions.
Page 1 Text Content
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13002AU
GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V
VCBO Collector-Base voltage (open emitter)
VCEO Collector-emitter voltage (open base) IC Collector current (DC) 1.5
ICM Collector current peak value
Ptot Total power dissipation Tmb ≤ 25 ˚C VCEsat Collector-emitter saturation voltage IC = 1.0 A;IB = 0.2 A 0.27 1.0
h FE IC = 1.0 A; VCE = 5 V
tfi Fall time (Inductive) IC = 1.0 A; IB1= 0.2 A ns
PINNING - SOT533 PIN CONFIGURATION SYMBOL PIN DESCRIPTION
collector emitter tab collector
Top view MBK915
LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector to emitter voltage VBE = 0 V VCEO Collector to emitter voltage (open base) VCBO Collector to base voltage (open emitter) IC Collector current (DC) 1.5 ICM Collector current peak value IB Base current (DC) 0.75 IBM Base current peak value 1.5 Ptot Total power dissipation Tmb ≤ 25 ˚C Tstg Storage temperature -65 ˚C Tj Junction temperature ˚C
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base 2.5 K/W Rth j-a Junction to ambient in free air K/W
January 2000 Rev 1.000
Page Summary Contents For Philips Semiconductors PHE13002AU Data Handbook
Manual Details
| Brand | Philips |
|---|---|
| Pages | 8 |
| File Size | 70.24 KB |
| Published | July 12, 2026 |
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