Philips Semiconductors PHE13003AU Data Sheet
Summary
This datasheet provides complete specifications for the Philips PHE13003AU high-voltage high-speed planar-passivated NPN power switching transistor in a SOT533 package, designed for electronic lighting ballast, converter, and inverter applications. It details electrical characteristics, switching performance, thermal ratings, and safe operating area data for power electronics design.
Page 1 Text Content
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13003AU
GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V VCBO Collector-Base voltage (open emitter) VCEO Collector-emitter voltage (open base) IC Collector current (DC) 1.5 ICM Collector current peak value Ptot Total power dissipation Tmb ≤ 25 ˚C VCEsat Collector-emitter saturation voltage IC = 1.0 A;IB = 0.25 A 1.0 h FE IC = 1.0 A; VCE = 5 V tfi Fall time (Inductive) IC = 1.0 A; IBON = 0.2 A ns
PINNING - SOT533 PIN CONFIGURATION SYMBOL PIN DESCRIPTION
collector emitter tab collector
Top view MBK915
LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector to emitter voltage VBE = 0 V VCEO Collector to emitter voltage (open base) VCBO Collector to base voltage (open emitter) IC Collector current (DC) 1.5 ICM Collector current peak value IB Base current (DC) 0.75 IBM Base current peak value 1.5 Ptot Total power dissipation Tmb ≤ 25 ˚C Tstg Storage temperature -65 ˚C Tj Junction temperature ˚C
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base 2.5 K/W Rth j-a Junction to ambient in free air K/W
September 1999 Rev 1.000
Page Summary Contents For Philips Semiconductors PHE13003AU Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 7 |
| File Size | 49.87 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What is the peak collector-emitter voltage this transistor can handle?
The maximum allowed Collector-emitter voltage peak value (V_CESM) is 700 V.
Does the PHE13003AU come in a specific package type?
Yes, it is supplied in the SOT533 envelope with defined pin configuration (Collector=2, Base=1, Emitter=3).
What are my limits regarding power dissipation and temperature?
The maximum total power dissipation (P_tot) is 50 W at a junction temperature (Tj) of 25°C.
Can I use this transistor in life support equipment?
No, these products are not designed for use in life support appliances or systems.