Philips Semiconductors PHP80N06LT, PHB80N06LT Data Sheet
Summary
This N-channel logic level MOSFET is a high-performance power transistor featuring advanced Trench technology and exceptionally low on-state resistance, making it ideal for demanding switching applications, including DC-to-DC converters. The product manual provides comprehensive technical specifications essential for designers, detailing absolute maximum ratings, key electrical characteristics (such as $R_{ds(on)}$), thermal dissipation curves, and pin configurations for both SOT78 and SOT404 packages. Use this guide to ensure optimal circuit design and reliable performance in power management systems.
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Philips Semiconductors Product specification
Trench MOS transistor PHP80N06LT, PHB80N06LT Logic level FET
FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology VDSS = 55 V • Very low on-state resistance • Fast switching ID = 75 A • Stable off-state characteristics • High thermal cycling performance RDS(ON) ≤ 14 mΩ (VGS = 5 V) • Low thermal resistance
RDS(ON) ≤ 13 mΩ (VGS = 10 V)
GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP80N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB80N06LT is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 PIN DESCRIPTION
drain1
source
tab drain
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ˚C to 175˚C VDGR Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ VGS Gate-source voltage ± 13 ID Continuous drain current Tmb = 25 ˚C
Tmb = 100 ˚C
IDM Pulsed drain current Tmb = 25 ˚C PD Total power dissipation Tmb = 25 ˚C Tj, Tstg Operating junction and - 55 ˚C
storage temperature
1 It is not possible to make connection to pin 2 of the SOT404 package.
January 1998 Rev 1.300
Page Summary Contents For Philips Semiconductors PHP80N06LT, PHB80N06LT Data Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 9 |
| File Size | 74.92 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the intended application for this N-channel FET?
It is intended for dc to dc converters and general purpose switching applications.
How does the thermal resistance vary between packages?
For SOT78, it's 60 K/W (junction-to-ambient); for SOT404, it's minimum 50 K/W (junction-to-PCB).
What are the limiting values for drain current (continuous and pulsed)?
Continuous is -75 A; Pulsed is -240 A.
Are there specific safety warnings regarding use?
These products are not designed for use in life support appliances, devices or systems.