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Philips Semiconductors BU2730AL Data Sheet

Summary

This document provides detailed preliminary specifications for the BU2730AL, a high-voltage, NPN power transistor designed for high-speed switching applications, particularly in large screen color television horizontal deflection circuits. The manual contains comprehensive technical data, including static and dynamic electrical characteristics, thermal resistance ratings, and packaging information. It is essential resource material for electronics engineers and product designers developing advanced display control systems, ensuring the reliable integration of this robust component.

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查询BU2730供应商 Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor BU2730AL

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 VCEO Collector-emitter voltage (open base) IC Collector current (DC) ICM Collector current peak value Ptot Total power dissipation Tmb ≤ 25 ˚C VCEsat Collector-emitter saturation voltage IC = 9 A; IB = 1.8 A 5.0 ICsat Collector saturation current f = 32 k Hz ts Storage time ICsat = 9 A; f = 32 k Hz 3.5 4.5 µs

PINNING - SOT430 PIN CONFIGURATION SYMBOL PIN DESCRIPTION

collector emitter

heat collector sink

LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V VCEO Collector-emitter voltage (open base) IC Collector current (DC) ICM Collector current peak value IB Base current (DC) IBM Base current peak value -IB(AV) Reverse base current average over any 20 ms period m A -IBM Reverse base current peak value 1 Ptot Total power dissipation Tmb ≤ 25 ˚C Tstg Storage temperature -55 ˚C Tj Junction temperature ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base 1.0 K/W Rth j-a Junction to ambient in free air K/W

1 Turn-off current.

April 1997 Rev 1.000

Page Summary Contents For Philips Semiconductors BU2730AL Data Sheet

Page 1 查询BU2730供应商 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plast...
Page 2 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNI...
Page 3 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL MECHANICAL DATA Dimensions in mm 5.3 max 20.5 max Net Mass: 9 g seating plane 2.5 max 3.5 max 0.8 max 3.0 ma...
Page 4 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications...

Manual Details

Brand Philips
Pages 4
File Size 17.92 KB
Published July 04, 2026
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Frequently Asked Questions

What is the peak collector-emitter voltage of BU2730AL?

The peak collector-emitter voltage is 1700 V when V_BE = 0 V.

What is BU2730AL intended for?

It is for use in horizontal deflection circuits of large screen colour TV receivers.

Can BU2730AL be used in life support systems?

No, it is not designed for life support applications.

What is the max DC collector current?

The maximum DC collector current is 16 A.