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Philips Semiconductors BU2520AX Data Sheet

Summary

The BU2520AX is a high-voltage, high-speed switching NPN power transistor designed for large-screen color television receivers. This manual provides essential technical specifications, including voltage ratings up to 1500V, current handling of 25A peak, and thermal management details for use in horizontal deflection circuits.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520AX

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 k Hz.

QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V VCEO Collector-emitter voltage (open base) IC Collector current (DC) ICM Collector current peak value Ptot Total power dissipation Ths ≤ 25 ˚C VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A 5.0 ICsat Collector saturation current 6.0 tf Fall time ICsat = 6.0 A; IB(end) = 0.85 A 0.2 0.35 µs

PINNING - SOT399 PIN CONFIGURATION SYMBOL PIN DESCRIPTION case

collector emitter

case isolated

LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V VCEO Collector-emitter voltage (open base) IC Collector current (DC) ICM Collector current peak value IB Base current (DC) IBM Base current peak value -IB(AV) Reverse base current average over any 20 ms period m A -IBM Reverse base current peak value 1 Ptot Total power dissipation Ths ≤ 25 ˚C Tstg Storage temperature -55 ˚C Tj Junction temperature ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink without heatsink compound 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound 2.8 K/W Rth j-a Junction to ambient in free air K/W

1 Turn-off current.

September 1997 Rev 2.200

Page Summary Contents For Philips Semiconductors BU2520AX Data Sheet

Page 1 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack env...
Page 2 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS...
Page 3 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX ICsat TRANSISTOR 100-200R IC DIODE IB IBend Horizontal Oscilloscope 13us10us Vertical 30-60 Hz Fig.1. Test circu...
Page 4 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX h FE VBESAT / V 1.2 Tj = 25 C Tj = 25 C 1.1 Tj = 125 C Tj = 125 C5 V IC / A IB / A Fig.7. Typical DC current gai...
Page 5 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX ts, tf / us Normalised Power Derating with heatsink compound 16 k Hz IB / A Ths / C Fig.13. Typical collector st...
Page 6 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX BU2520AFIC / A 30 us 100 us 10 ms VCE / V Fig.17. Forward bias safe operating area. Ths = 25 ˚C ICDC & ICM =...
Page 7 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX MECHANICAL DATA Dimensions in mm 5.8 max 16.0 max Net Mass: 5.88 g 22.5 max 2.2 max 0.95 max Fig.18. SOT399; The...
Page 8 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for...

Manual Details

Brand Philips
Pages 8
File Size 62.68 KB
Published June 20, 2026
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Frequently Asked Questions

What is the maximum peak collector-emitter voltage?

1500 V (VCESM).

What is the total power dissipation at case temperature ≤25°C?

45 W.

What is the typical fall time for 32 kHz deflection?

0.2 μs (max 0.35 μs).

Are these transistors suitable for life support applications?

No, they are not designed for life support; such use is at own risk.