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Philips Semiconductors PowerMOS Transistor BUK108-50GL Data Sheet

Summary

This robust logic-level TOPFET PowerMOS transistor is a general-purpose, overload-protected switch designed for high-current power management in demanding environments. Engineered for reliability in applications such as automotive systems, lamps, motors, and solenoids, it features integrated protection against over-temperature, short circuits, and overvoltage transients. The accompanying manual provides complete technical specifications, operational limiting values, and comprehensive electrical data required by engineers designing robust switching controllers that demand high performance and built-in safety mechanisms.

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查询BUK108-50GL供应商 Philips Semiconductors Product specification

Power MOS transistor BUK108-50GL Logic level TOPFET

DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power

MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage

mount envelope, intended as a ID Continuous drain current 13.5 general purpose switch for PD Total power dissipation automotive systems and other Tj Continuous junction temperature ˚C applications. RDS(ON) Drain-source on-state resistance mΩ

VIS = 5 V

APPLICATIONS General controller for driving lamps motors solenoids heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage DRAIN Low on-state resistance Overload protection against over temperature Overload protection against

short circuit load

Latched overload protection CLAMP

POWER

reset by input

INPUT

5 V logic compatible input level RIG MOSFET

Control of power MOSFET and supply of overload protection circuits

LOGIC AND

derived from input

Low operating input current PROTECTION

ESD protection on input pin Overvoltage clamping for turn off of inductive loads

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION

TOPFET

input

drain source mb drain

June 1996 Rev 1.000

Page Summary Contents For Philips Semiconductors PowerMOS Transistor BUK108-50GL Data Sheet

Page 1 查询BUK108-50GL供应商 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT...
Page 2 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL ...
Page 3 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j-mb Jun...
Page 4 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET TRANSFER CHARACTERISTICS Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transc...
Page 5 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET PD% Normalised Power Derating Zth / (K/W) BUK108-50GL tp D = tp Tmb / C t / s Fig.2. Normalised limitin...
Page 6 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET RDS(ON) / Ohm BUK108-50GL Normalised RDS(ON) = f(Tj) 0.20 54.543.5VIS / V = 5.5 ID / A Tj / C Fig.8. Ty...
Page 7 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET Energy & Time BUK108-50GL IIS / u A BUK108-50GL Time / ms Energy / J Tj(TO) Tmb / C VIS / V Fig.14....
Page 8 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET VDD VDD = VCL RL LD : adjust for correct ID TOPFET TOPFET VIS VIS ID measure ID measure Fig.20. Test ci...
Page 9 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET EDSM% Iiso normalised to 25 C Tmb / C Tj / C Fig.26. Normalised limiting clamping energy. Fig.29. Norma...
Page 10 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET MECHANICAL DATA Dimensions in mm 10.3 max 4.5 max 1.4 max Net Mass: 1.4 g 11 max 0.85 max Fig.31. SOT40...
Page 11 Philips Semiconductors Product specification Power MOS transistor BUK108-50GL Logic level TOPFET DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifica...

Manual Details

Brand Philips
Pages 11
File Size 130.54 KB
Published July 07, 2026
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Frequently Asked Questions

What is the continuous drain current capacity?

The device can handle a continuous drain current (ID) up to 13.5 A at room temperature (T ≤ 25°C).

How does the TOPFET protect against overload conditions?

It provides both over-temperature and short-circuit load protection, losing power when either threshold is reached. The status of protection is latched until reset by the input.

What is the maximum continuous junction temperature allowed?

The maximum continuous junction temperature (Tj) for normal operation is 150°C.

Is this device compatible with general control logic?

Yes, it operates at a logic level and can be used to derive signals from controlled power MOSFETs using a 5V compatible input voltage (VIS).

What precautions are required when using this product in sensitive systems?

The manual cautions that the products are not designed for use in life support appliances or systems where malfunction could cause personal injury.