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PHILIPS PowerMOS Transistor BUK456-100A Data Sheet User Manual

Summary

Discover the BUK456-100A/B PowerMOS transistor, a robust N-channel field-effect device designed for high-power switching applications. This comprehensive manual provides detailed technical specifications, encompassing absolute maximum ratings, dynamic performance data, thermal characteristics, and safe operating areas. It is essential documentation for electrical engineers, power electronics designers, and system integrators building crucial equipment like SMPS, motor controllers, and DC/AC converters needing dependable, high-current switching capability.

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查询BUK456-100A供应商

Philips Semiconductors Product specification

Power MOS transistor BUK456-100A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 -100A -100B

The device is intended for use in VDS Drain-source voltage Switched Mode Power Supplies ID Drain current (DC)

(SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and Tj Junction temperature ˚C

in general purpose switching RDS(ON) Drain-source on-state 0.057 0.065

applications. resistance

PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION

gate drain

source tab drain

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage

ID Drain current (DC) Tmb = 25 ˚C ID Drain current (DC) Tmb = 100 ˚C IDM Drain current (pulse peak value) Tmb = 25 ˚C Ptot Total power dissipation Tmb = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction temperature ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance junction to 1.0 K/W mounting base

Rth j-a Thermal resistance junction to K/W

ambient

April 1998 Rev 1.100

Page Summary Contents For PHILIPS PowerMOS Transistor BUK456-100A Data Sheet User Manual

Page 1 查询BUK456-100A供应商 Philips Semiconductors Product specification Power MOS transistor BUK456-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT fie...
Page 2 Philips Semiconductors Product specification Power MOS transistor BUK456-100A/B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS D...
Page 3 Philips Semiconductors Product specification Power MOS transistor BUK456-100A/B PD% Normalised Power Derating Zth j-mb / (K/W) BUKx56-lv 0.01 tp D = tp Tmb / C t / s Fig.1. Normalised power dissipatio...
Page 4 Philips Semiconductors Product specification Power MOS transistor BUK456-100A/B VGS(TO) / V ID / A BUK456-100A Tj / C = 25 VGS / V Tj / C Fig.7. Typical transfer characteristics. Fig.10. Gate threshol...
Page 5 Philips Semiconductors Product specification Power MOS transistor BUK456-100A/B VGS / V BUK456-100 IF / A BUK456-100A VDS / V =20 Tj / C = 150 QG / n C VSDS / V Fig.13. Typical turn-on gate-charge cha...
Page 6 Philips Semiconductors Product specification Power MOS transistor BUK456-100A/B MECHANICAL DATA Dimensions in mm Net Mass: 2 g max 10,3 max 5,9 min 15,8 max 3,03,0 max not tinned 13,5 min 1,3 max (2x)...
Page 7 Philips Semiconductors Product specification Power MOS transistor BUK456-100A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product...