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PHILIPS PowerMOS Transistor BUK451-100A Data Booklet

Summary

The BUK451-100A/B is a robust N-channel PowerMOS field-effect transistor designed for demanding switching applications, including SMPS, motor control, and DC/DC converters. This technical manual provides comprehensive engineering specifications, detailing its absolute maximum ratings, dynamic characteristics, thermal impedances, and operational derating curves. It serves as a critical resource for power electronics engineers selecting components requiring high reliability and precise performance data.

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查询BUK451-100A供应商 Philips Semiconductors Preliminary Specification

Power MOS transistor BUK451-100A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK451 -100A -100B

The device is intended for use in VDS Drain-source voltage

Switched Mode Power Supplies ID Drain current (DC) 3.0 3.0 (SMPS), motor control, welding, Ptot Total power dissipation DC/DC and AC/DC converters, and Tj Junction temperature ˚C

in general purpose switching RDS(ON) Drain-source on-state 0.85 1.1

applications. resistance

PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION

gate drain

source tab drain

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage VDGR Drain-gate voltage RGS = 20 kΩ ±VGS Gate-source voltage

ID Drain current (DC) Tmb = 25 ˚C 3.0 3.0 ID Drain current (DC) Tmb = 100 ˚C 3.0 3.0 IDM Drain current (pulse peak value) Tmb = 25 ˚C Ptot Total power dissipation Tmb = 25 ˚C Tstg Storage temperature - 55 ˚C Tj Junction Temperature ˚C

Page Summary Contents For PHILIPS PowerMOS Transistor BUK451-100A Data Booklet

Page 1 查询BUK451-100A供应商 Philips Semiconductors Preliminary Specification Power MOS transistor BUK451-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT...
Page 2 Philips Semiconductors Preliminary Specification Power MOS transistor BUK451-100A/B THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to 3.75 K/W...
Page 3 Philips Semiconductors Preliminary Specification Power MOS transistor BUK451-100A/B PD% Normalised Power Derating Zth j-mb / (K/W) tp D = tp Tmb / C t / s Fig.1. Normalised power dissipation. Fig.4. T...
Page 4 Philips Semiconductors Preliminary Specification Power MOS transistor BUK451-100A/B ID / A BUK4y1-100 VGS(TO) / V Tj / C = 25 VGS / V Tj / C Fig.7. Typical transfer characteristics. Fig.10. Gate thres...
Page 5 Philips Semiconductors Preliminary Specification Power MOS transistor BUK451-100A/B VGS / V BUK4y1-100A IF / A BUK4y1-100A VDS / V = 20 Tj / C = 150 QG / n C VSDS / V Fig.13. Typical turn-on gate-char...
Page 6 Philips Semiconductors Preliminary Specification Power MOS transistor BUK451-100A/B MECHANICAL DATA Dimensions in mm Net Mass: 2 g max 10,3 max 5,9 min 15,8 max 3,03,0 max not tinned 13,5 min 1,3 max ...
Page 7 Philips Semiconductors Preliminary Specification Power MOS transistor BUK451-100A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for pro...

Manual Details

Brand Philips
Pages 7
File Size 47.14 KB
Published June 22, 2026
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Frequently Asked Questions

What is the maximum continuous drain current (I_D)?

The general specifications list a maximum I_D of 3.0 A at room temperature.

How is the device package wired?

Pin 2 is the gate (g), Pin 3 is the source (s), and Pin 1 is the drain (d).

What are the thermal resistance values for mounting?

The typical junction to mounting base thermal resistance (Rthj-mb) is 3.75 K/W.

Is this device suitable for life support applications?

No, these products are not designed for use in life support appliances, devices or systems.